Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect

Strong electric‐field‐induced enhancement of the thermal emission rate of holes from the doubly ionised charge state of the ΕL2 defect was revealed with the double‐correlation deep‐level transient spectroscopy in p‐type GaAs crystals of various crystallographic orientations. The observed enhancement...

Full description

Bibliographic Details

Published in:	Physica Status Solidi. B: Basic Solid State Physics Vol. 253; no. 10; pp. 1916 - 1922
Main Author:	Wosinski, Tadeusz
Format:	Journal Article
Language:	English
Published:	Blackwell Publishing Ltd 01-10-2016
Subjects:	Antisite defects Arsenic charge carrier emission Crystal defects Crystallography deep levels defects Emission spectroscopy GaAs phonons Solid state physics Thermal emission tunnel ionisation Tunnels (transportation)
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!