Magnetization reversal process in thin Co nanowires

• Published in: Journal of magnetism and magnetic materials Vol. 240; no. 1; pp. 297 - 300
• Main Authors: Hausmanns, B., Krome, T.P., Dumpich, G., Wassermann, E.F., Hinzke, D., Nowak, U., Usadel, K.D.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-02-2002; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Domain effects, magnetization curves, and hysteresis; Exact sciences and technology; Magnetic properties and materials; Magnetization curves, magnetization reversal, hysteresis, barkhausen and related effects; Magnetization reversal; Nanostructures; Numerical simulation studies; Physics; Magnetization reversal; Numerical simulation studies; Nanostructures; Inorganic compounds; Magnetization; Digital simulation; Magnetic field effects; Cobalt; Monte Carlo methods; Anisotropy; Wires; Transition elements; Coercive force; Magnetoresistance; Nanostructured materials
• ISSN: 0304-8853
• DOI: 10.1016/S0304-8853(01)00783-1

The magnetoresistance of single Co nanowires of various widths is investigated at low temperatures applying magnetic fields
μ
0
H up to 4.5
T. The in-plane longitudinal magnetoresistance shows pronounced features at coercive fields
H
c explained by the anisotropic magnetoresistance indicating the magnetization reversal process. Monte Carlo simulations present the magnetization distribution during the reversal process, revealing different mechanisms depending on the wire width.