Design Optimization of a SiGe/Si Quantum-Well Optical Modulator

• Published in: Journal of lightwave technology Vol. 26; no. 6; pp. 678 - 684
• Main Authors: Maine, S., Morini, D.M., Vivien, L., Cassan, E., Laval, S.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 15-03-2008; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; Computer simulation; Design optimization; Doping; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Geometrical optics; Germanium silicon alloys; Integrated optics; Integrated optics. Optical fibers and wave guides; Mathematical models; Modulators; Optical and optoelectronic circuits; Optical modulation; Optical waveguides; PIN diodes; Quantum wells; Silicon germanides; Silicon germanium; Silicon on insulator technology; Silicon substrates; Systems, networks and services of telecommunications; Telecommunications; Telecommunications and information theory; Transmission and modulation (techniques and equipments); waveguides; Semiconductor alloys; Quantum well; Rib waveguide; silicon-on-insulator technology; Geometrical parameter; waveguides; Doping; Optical modulator; Waveguide; Optimization; Optimal design; Free carrier; Silicon on insulator technology; Numerical simulation; p i n diode; High frequency; Optical modulation; Figure of merit
• ISSN: 0733-8724; 1558-2213
• DOI: 10.1109/JLT.2007.916589

In this paper, design optimization of a SiGe/Si quantum-well optical modulator integrated on silicon-on-insulator (SOI) substrate to achieve high-frequency operation is reported. The structure, based on free-carrier depletion in a PIN diode, is integrated in a rib waveguide. Influence of geometrical parameters, layer doping, and metal contacts is determined through numerical simulations and optimized structures are defined. The obtained figure of merit V pi L pi is 1.8 V-cm.