Evolution of dislocation substructure in vapour-deposited lead films on glass substrates

• Published in: Philosophical magazine (Abingdon, England) Vol. 83; no. 8; pp. 1033 - 1044
• Main Authors: Chatterjee, P., Gupta, S. P. Sen
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis Group 11-03-2003; Taylor and Francis
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Metals. Metallurgy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Dislocation structure; XRD; Substructure; Experimental study; Thin films; Dislocation density; Thickness; Line broadening; Size effect; Dislocation arrays; Heterojunctions; Lead; Microstructure
• ISSN: 1478-6435; 1478-6443
• DOI: 10.1080/0141861031000061701

Systematic variation of anisotropic X-ray line broadening in vapour-deposited Pb films of various thicknesses on glass substrates is studied using dislocation model of strain anisotropy incorporated into a modified Williamson-Hall and modified Warren-Averbach procedure. For smaller film thicknesses in the range of about 100-200 nm, the dislocation network is less correlated and contains substantial screw component and twin or growth faults. The films of larger thicknesses (greater than 500 nm), on the other hand, consist mostly of edge dislocations with a more regular and correlated dislocation structure. The present study reveals the inadequacy of applicability of conventional Warren-Averbach analysis in regular and correlated dislocation structures.