Luminescence Intensity Reduction in Mg-Doped GaN Grown by Metalorganic Chemical Vapor Phase Epitaxy

• Published in: Japanese Journal of Applied Physics Vol. 40; no. 4A; pp. L306 - L308
• Main Authors: Chen-Ke Shu, Chen-Ke Shu, Hsiao-Hui Chen, Hsiao-Hui Chen, Wen-Hsiung Lee, Wen-Hsiung Lee, Yung-Chung Pan, Yung-Chung Pan, Huai-Ying Huang, Huai-Ying Huang, Jehn Ou, Jehn Ou, Wei-Kuo Chen, Wei-Kuo Chen, Wen-Hsiung Chen, Wen-Hsiung Chen, Ming-Chih Lee, Ming-Chih Lee
• Format: Journal Article
• Language: English
• Published: 01-04-2001
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.40.L306

Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm
2
, a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature, a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.