Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature
Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases...
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Published in: | Journal of alloys and compounds Vol. 801; no. C; pp. 409 - 414 |
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Main Authors: | , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Lausanne
Elsevier B.V
15-09-2019
Elsevier BV Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | Co-Zn-Ni-O thin films were grown on glass at ambient temperature (TS < 65 °C) by co-sputtering from Co3O4, ZnO, and NiO targets to determine the structural and opto-electronic properties across the ternary composition space. Compositional domains with spinel, wurtzite, rock-salt, and mixed phases were observed, albeit with very weak X-ray diffraction peaks, overall suggesting the likely presence of a co-existent amorphous component. The electrical conductivity had a maximum value of ∼35 S/cm that occurs where the optical absorption is also the strongest. The work functions range from 5.0 to 5.8 eV for all samples, but with no clear composition-based trends. Overall, it appears that the optoelectronic properties of the Co-Zn-Ni-O materials are much less sensitive to substrate temperature compared to other p-type oxide semiconductors, resulting in technologically-relevant ambient-temperature-deposited thin films.
•Majority of pseudo-ternary CoO-NiO-ZnO composition space explored.•Co-Zn-Ni-O conductivity depends less on temperature than other p-type oxides.•Ambient-temp-deposited Co-Zn-Ni-O films have technologically relevant conductivity.•For Ambient-temp-deposited Co-Zn-Ni-O, highest conductivity films are the least crystalline. |
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Bibliography: | USDOE Office of Science (SC), Basic Energy Sciences (BES) AC36-08GO28308 NREL/JA-5K00-68962 |
ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2019.05.275 |