Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of “digital twins”, i.e., a comb...
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Published in: | Crystals (Basel) Vol. 12; no. 12; p. 1701 |
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Abstract | Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of “digital twins”, i.e., a combined sequence of predictive chemical–physical simulations and trained black-box techniques, should ideally complement the real sequence of processes throughout all development and production stages, starting from the growth of materials, their functional manipulation and finally their integration in nano-devices. To achieve this framework, computational implementations at different space and time scales are necessary, ranging from the atomistic to the macro-scale. In this paper, we propose a general paradigm for the industrially driven computational modeling of materials by deploying a multiscale methodology based on physical–chemical simulations bridging macro, meso and atomic scale. We demonstrate its general applicability by studying two completely different processing examples, i.e., the growth of group IV crystals through physical vapor deposition and their thermal treatment through pulsed laser annealing. We indicate the suitable formalisms, as well as the advantages and critical issues associated with each scale, and show how numerical methods for the solution of the models could be coupled to achieve a complete and effective virtualization of the process. By connecting the process parameters to atomic scale modifications such as lattice defects or faceting, we highlight how a digital twin module can gain intrinsic predictivity far from the pre-assessed training conditions of black-box “Virtual Metrology” techniques. |
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AbstractList | Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of "digital twins", i.e., a combined sequence of predictive chemical-physical simulations and trained black-box techniques, should ideally complement the real sequence of processes throughout all development and production stages, starting from the growth of materials, their functional manipulation and finally their integration in nano-devices. To achieve this framework, computational implementations at different space and time scales are necessary, ranging from the atomistic to the macro-scale. In this paper, we propose a general paradigm for the industrially driven computational modeling of materials by deploying a multiscale methodology based on physical-chemical simulations bridging macro, meso and atomic scale. We demonstrate its general applicability by studying two completely different processing examples, i.e., the growth of group IV crystals through physical vapor deposition and their thermal treatment through pulsed laser annealing. We indicate the suitable formalisms, as well as the advantages and critical issues associated with each scale, and show how numerical methods for the solution of the models could be coupled to achieve a complete and effective virtualization of the process. By connecting the process parameters to atomic scale modifications such as lattice defects or faceting, we highlight how a digital twin module can gain intrinsic predictivity far from the pre-assessed training conditions of black-box "Virtual Metrology" techniques. |
Audience | Academic |
Author | La Via, Francesco Lombardo, Salvatore F. Deretzis, Ioannis Fisicaro, Giuseppe Calogero, Gaetano Schöler, Michael Wellmann, Peter J. Kollmuß, Manuel La Magna, Antonino |
Author_xml | – sequence: 1 givenname: Gaetano orcidid: 0000-0003-3610-3231 surname: Calogero fullname: Calogero, Gaetano – sequence: 2 givenname: Ioannis orcidid: 0000-0001-7252-1831 surname: Deretzis fullname: Deretzis, Ioannis – sequence: 3 givenname: Giuseppe orcidid: 0000-0003-4502-3882 surname: Fisicaro fullname: Fisicaro, Giuseppe – sequence: 4 givenname: Manuel orcidid: 0000-0001-6535-1635 surname: Kollmuß fullname: Kollmuß, Manuel – sequence: 5 givenname: Francesco orcidid: 0000-0002-6842-581X surname: La Via fullname: La Via, Francesco – sequence: 6 givenname: Salvatore F. orcidid: 0000-0003-1877-2706 surname: Lombardo fullname: Lombardo, Salvatore F. – sequence: 7 givenname: Michael orcidid: 0000-0002-5272-4954 surname: Schöler fullname: Schöler, Michael – sequence: 8 givenname: Peter J. orcidid: 0000-0002-2180-1507 surname: Wellmann fullname: Wellmann, Peter J. – sequence: 9 givenname: Antonino orcidid: 0000-0002-4087-5210 surname: La Magna fullname: La Magna, Antonino |
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Cites_doi | 10.1021/acs.jpcc.9b10874 10.1103/PhysRevApplied.18.034045 10.1016/j.apsusc.2019.144470 10.1002/nme.2579 10.1038/s41563-020-00913-0 10.1103/PhysRevLett.121.265701 10.1016/j.measen.2021.100046 10.1016/0021-9991(88)90002-2 10.1016/j.eswa.2009.05.053 10.1109/TED.2011.2114666 10.1116/1.4853675 10.1039/D1TA02535J 10.1007/s00340-017-6677-z 10.1016/j.compchemeng.2019.05.016 10.1063/1.1746879 10.1016/0956-7151(92)90103-L 10.1016/S0022-0248(99)00771-X 10.1063/1.1906318 10.1063/1.4818630 10.1063/1.5132300 10.1103/PhysRevE.78.031605 10.1002/crat.2170280416 10.1002/9783527824724 10.1016/S0022-0248(98)01215-9 10.1016/j.ces.2010.06.004 10.1016/j.apsusc.2020.148218 10.1016/j.apsusc.2020.146752 10.4028/www.scientific.net/MSF.821-823.77 10.1116/1.4966606 10.1063/1.5008362 10.1016/j.optmat.2018.06.068 10.1021/nl4042438 10.1021/acs.cgd.1c00343 10.1021/acs.nanolett.5b03781 10.1109/ICMLA.2013.186 10.1088/1361-6641/aad831 10.1016/0927-0256(95)00047-T 10.1038/s41524-022-00720-y 10.1002/crat.201900121 10.1016/S1079-4050(96)80006-8 10.1016/j.compind.2021.103508 10.1002/pssa.201800597 10.1103/PhysRevE.57.4323 10.1143/JJAP.44.8650 10.3390/ma14164769 10.1557/s43577-021-00214-0 10.1063/1.3531562 10.1007/s00170-017-0233-1 10.1149/1.1602084 10.1063/1.5058143 10.1016/j.mssp.2016.10.047 10.1201/b17476 10.1016/j.compind.2021.103558 10.1063/1.4974872 |
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References | ref_58 Penazzi (ref_66) 2011; 58 Cheimarios (ref_12) 2010; 65 Lombardo (ref_42) 2018; 123 Lovarelli (ref_65) 2022; 18 Alberti (ref_18) 2019; 216 ref_19 ref_17 Smecca (ref_31) 2021; 9 Dagault (ref_62) 2020; 527 Deagen (ref_3) 2022; 47 ref_15 Alippi (ref_29) 2005; 86 Kang (ref_7) 2009; 36 Suthar (ref_8) 2019; 127 Pateau (ref_27) 2014; 32 Huet (ref_54) 2020; 505 Osano (ref_43) 2005; 44 Danielsson (ref_13) 2020; 124 Stiffler (ref_52) 1992; 40 ref_24 ref_23 Steiner (ref_16) 2020; 55 ref_22 Karma (ref_53) 1998; 57 Avrov (ref_34) 1999; 198–199 Geuzaine (ref_25) 2009; 79 Cale (ref_47) 1996; 22 Kaiser (ref_39) 2017; 121 Colombo (ref_38) 2015; 15 Calogero (ref_21) 2022; 8 Garozzo (ref_45) 2003; 150 Buta (ref_63) 2008; 78 Fish (ref_11) 2021; 20 Choi (ref_10) 2021; 16 ref_36 Escoffery (ref_30) 1964; 35 ref_32 Bonati (ref_61) 2018; 121 Lombardo (ref_37) 2017; 62 Haidar (ref_26) 2016; 34 Osher (ref_44) 1988; 79 Hribernik (ref_64) 2021; 133 Almeida (ref_51) 2018; 84 Alberti (ref_55) 2010; 108 Fisicaro (ref_28) 2014; 11 Wellmann (ref_46) 2018; 33 Zhang (ref_41) 2017; 123 Lilov (ref_48) 1993; 28 Fisicaro (ref_14) 2020; 7 Perno (ref_67) 2022; 134 Sciuto (ref_40) 2020; 4 Qiu (ref_49) 2014; 14 Mauceri (ref_59) 2021; 21 Ma (ref_33) 2000; 211 Rankl (ref_35) 2015; 821–823 Sun (ref_60) 2018; 124 ref_1 ref_2 Alberti (ref_56) 2013; 114 Sanzaro (ref_57) 2021; 539 Cerny (ref_50) 1995; 4 ref_9 Fei (ref_5) 2018; 94 (ref_20) 2015; 3 ref_4 ref_6 |
References_xml | – volume: 124 start-page: 7725 year: 2020 ident: ref_13 article-title: A Systematic Method for Predictive In Silico Chemical Vapor Deposition publication-title: J. Phys. Chem. C doi: 10.1021/acs.jpcc.9b10874 contributor: fullname: Danielsson – volume: 18 start-page: 034045 year: 2022 ident: ref_65 article-title: Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures publication-title: Phys. Rev. Appl. doi: 10.1103/PhysRevApplied.18.034045 contributor: fullname: Lovarelli – volume: 505 start-page: 144470 year: 2020 ident: ref_54 article-title: Pulsed laser annealing for advanced technology nodes: Modeling and calibration publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2019.144470 contributor: fullname: Huet – volume: 3 start-page: 9 year: 2015 ident: ref_20 article-title: The fenics project version 1.5 publication-title: Arch. Numer. Softw. – volume: 79 start-page: 1309 year: 2009 ident: ref_25 article-title: Gmsh: A 3-d finite element mesh generator with built-in pre- and post-processing facilities publication-title: Int. J. Numer. Methods Eng. doi: 10.1002/nme.2579 contributor: fullname: Geuzaine – volume: 20 start-page: 774l year: 2021 ident: ref_11 article-title: Mesoscopic and multiscale modelling in materials publication-title: Nat. Mater. doi: 10.1038/s41563-020-00913-0 contributor: fullname: Fish – volume: 121 start-page: 265701 year: 2018 ident: ref_61 article-title: Silicon Liquid Structure and Crystal Nucleation from Ab Initio Deep Metadynamics publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.121.265701 contributor: fullname: Bonati – volume: 16 start-page: 100046 year: 2021 ident: ref_10 article-title: Machine learning-based virtual metrology on film thickness in amorphous carbon layer deposition process publication-title: Meas. Sens. doi: 10.1016/j.measen.2021.100046 contributor: fullname: Choi – volume: 79 start-page: 12 year: 1988 ident: ref_44 article-title: Fronts propagating with curvature-dependent speed: Algorithms based on Hamilton-Jacobi formulations publication-title: J. Comp. Phys. doi: 10.1016/0021-9991(88)90002-2 contributor: fullname: Osher – ident: ref_1 – volume: 36 start-page: 12554 year: 2009 ident: ref_7 article-title: A virtual metrology system for semiconductor manufacturing publication-title: Exp. Sys. Appl. doi: 10.1016/j.eswa.2009.05.053 contributor: fullname: Kang – ident: ref_23 – volume: 58 start-page: 1425 year: 2011 ident: ref_66 article-title: The Multiscale Paradigm in Electronic Device Simulation publication-title: IEEE Trans. Elec. Dev. doi: 10.1109/TED.2011.2114666 contributor: fullname: Penazzi – volume: 32 start-page: 021303 year: 2014 ident: ref_27 article-title: Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties publication-title: J. Vac. Sci. Technol. A doi: 10.1116/1.4853675 contributor: fullname: Pateau – volume: 9 start-page: 16456 year: 2021 ident: ref_31 article-title: Two-step MAPbI3 deposition by low-vacuum proximity-space-effusion for high-efficiency inverted semitransparent perovskite solar cells publication-title: J. Mater. Chem. A doi: 10.1039/D1TA02535J contributor: fullname: Smecca – volume: 123 start-page: 86 year: 2017 ident: ref_41 article-title: Transient reflectivity measurement of photocarrier dynamics in GaSe thin films publication-title: Appl. Phys. B doi: 10.1007/s00340-017-6677-z contributor: fullname: Zhang – volume: 127 start-page: 140 year: 2019 ident: ref_8 article-title: Next-generation virtual metrology for semiconductor manufacturing: A feature-based framework publication-title: Comp. Chem. Eng. doi: 10.1016/j.compchemeng.2019.05.016 contributor: fullname: Suthar – volume: 35 start-page: 913 year: 1964 ident: ref_30 article-title: Improved Knudsen-Cell Vapor Source for Vacuum Depositions publication-title: Rev. Sci. Instrum. doi: 10.1063/1.1746879 contributor: fullname: Escoffery – volume: 40 start-page: 401617 year: 1992 ident: ref_52 article-title: Interfacial transport kinetics during the solidification of silicon publication-title: Acta Metall. Mater. doi: 10.1016/0956-7151(92)90103-L contributor: fullname: Stiffler – volume: 211 start-page: 352 year: 2000 ident: ref_33 article-title: Modeling of silicon carbide crystal growth by physical vapor transport method publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(99)00771-X contributor: fullname: Ma – volume: 11 start-page: 109 year: 2014 ident: ref_28 article-title: Atomic scale Monte Carlo simulations of BF3 plasma immersion ion implantation in Si publication-title: Phys. Stat. Sol. C contributor: fullname: Fisicaro – volume: 86 start-page: 161905 year: 2005 ident: ref_29 article-title: Role of light scattering in excimer laser annealing of Si publication-title: Appl. Phys. Lett. doi: 10.1063/1.1906318 contributor: fullname: Alippi – volume: 114 start-page: 121301 year: 2013 ident: ref_56 article-title: Role of the early stages of Ni-Si interaction on the structural properties of the reaction products publication-title: J. Appl. Phys. doi: 10.1063/1.4818630 contributor: fullname: Alberti – volume: 7 start-page: 021402 year: 2020 ident: ref_14 article-title: Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC publication-title: Appl. Phys. Rev. doi: 10.1063/1.5132300 contributor: fullname: Fisicaro – volume: 78 start-page: 031605 year: 2008 ident: ref_63 article-title: Atomistic simulation study of the structure and dynamics of a faceted crystal-melt interface publication-title: Phys. Rev. E doi: 10.1103/PhysRevE.78.031605 contributor: fullname: Buta – volume: 28 start-page: 503 year: 1993 ident: ref_48 article-title: Thermodynamic analysis of the Gas Phase at the Dissociative Evaporation of Silicon Carbide publication-title: Cryst. Res. Technol doi: 10.1002/crat.2170280416 contributor: fullname: Lilov – ident: ref_32 doi: 10.1002/9783527824724 – ident: ref_17 – volume: 198–199 start-page: 1011 year: 1999 ident: ref_34 article-title: The analysis of mass transfer in system beta-SiC—Alpha-SiC under silicon carbide sublimation growth publication-title: J. Cryst. Growth doi: 10.1016/S0022-0248(98)01215-9 contributor: fullname: Avrov – volume: 65 start-page: 5018 year: 2010 ident: ref_12 article-title: Multiscale modeling in chemical vapor deposition processes: Coupling reactor scale with feature scale computations publication-title: Chem. Eng. Sci. doi: 10.1016/j.ces.2010.06.004 contributor: fullname: Cheimarios – volume: 539 start-page: 148218 year: 2021 ident: ref_57 article-title: Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2020.148218 contributor: fullname: Sanzaro – ident: ref_24 – volume: 527 start-page: 146752 year: 2020 ident: ref_62 article-title: Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers publication-title: Appl. Surf. Sci. doi: 10.1016/j.apsusc.2020.146752 contributor: fullname: Dagault – volume: 821–823 start-page: 77 year: 2015 ident: ref_35 article-title: Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC publication-title: Mater. Sci. Forum doi: 10.4028/www.scientific.net/MSF.821-823.77 contributor: fullname: Rankl – volume: 34 start-page: 061306 year: 2016 ident: ref_26 article-title: Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge publication-title: J. Vac. Sci. Technol. doi: 10.1116/1.4966606 contributor: fullname: Haidar – volume: 123 start-page: 105105 year: 2018 ident: ref_42 article-title: Phase field model of the nanoscale evolution during the explosive crystallization phenomenon publication-title: J. Appl. Phys. doi: 10.1063/1.5008362 contributor: fullname: Lombardo – volume: 84 start-page: 259 year: 2018 ident: ref_51 article-title: Sub-wavelength self-organization of chalcogenide glass by direct laser writing publication-title: Opt. Mat. doi: 10.1016/j.optmat.2018.06.068 contributor: fullname: Almeida – volume: 14 start-page: 1769 year: 2014 ident: ref_49 article-title: Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon publication-title: Nano Lett. doi: 10.1021/nl4042438 contributor: fullname: Qiu – volume: 21 start-page: 4046 year: 2021 ident: ref_59 article-title: Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates publication-title: Cryst. Growth Des. doi: 10.1021/acs.cgd.1c00343 contributor: fullname: Mauceri – volume: 15 start-page: 8255 year: 2015 ident: ref_38 article-title: Thermal Rectification by Design in Telescopic Si Nanowires publication-title: Nano Lett. doi: 10.1021/acs.nanolett.5b03781 contributor: fullname: Colombo – ident: ref_9 doi: 10.1109/ICMLA.2013.186 – volume: 33 start-page: 103001 year: 2018 ident: ref_46 article-title: Review of SiC crystal growth technology publication-title: Semicond. Sci. Technol. doi: 10.1088/1361-6641/aad831 contributor: fullname: Wellmann – volume: 4 start-page: 269 year: 1995 ident: ref_50 article-title: Numerical simulation of the formation of Ni silicides induced by pulsed lasers publication-title: Comp. Mat. Sci. doi: 10.1016/0927-0256(95)00047-T contributor: fullname: Cerny – volume: 8 start-page: 36 year: 2022 ident: ref_21 article-title: Multiscale modeling of ultrafast melting phenomena publication-title: npj Comput. Mater. doi: 10.1038/s41524-022-00720-y contributor: fullname: Calogero – volume: 55 start-page: 1900121 year: 2020 ident: ref_16 article-title: Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results publication-title: Cryst. Res. Technol. doi: 10.1002/crat.201900121 contributor: fullname: Steiner – volume: 22 start-page: 175 year: 1996 ident: ref_47 article-title: Feature scale transport and reaction during low-pressure deposition processes publication-title: Thin Film. doi: 10.1016/S1079-4050(96)80006-8 contributor: fullname: Cale – volume: 133 start-page: 103508 year: 2021 ident: ref_64 article-title: Autonomous, context-aware, adaptive Digital Twins—State of the art and roadmap publication-title: Comput. Ind. doi: 10.1016/j.compind.2021.103508 contributor: fullname: Hribernik – volume: 216 start-page: 1800597 year: 2019 ident: ref_18 article-title: Simulation of the growth kinetics in group IV compound semiconductors publication-title: Phys. Status Solidi A doi: 10.1002/pssa.201800597 contributor: fullname: Alberti – volume: 57 start-page: 4323 year: 1998 ident: ref_53 article-title: Quantitative phase-field modeling of dendritic growth in two and three dimensions publication-title: Phys. Rev. E doi: 10.1103/PhysRevE.57.4323 contributor: fullname: Karma – volume: 44 start-page: 8650 year: 2005 ident: ref_43 article-title: An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching publication-title: Jpn. J. Appl. Phys. doi: 10.1143/JJAP.44.8650 contributor: fullname: Osano – ident: ref_6 – ident: ref_58 doi: 10.3390/ma14164769 – volume: 47 start-page: 379 year: 2022 ident: ref_3 article-title: The materials tetrahedron has a “digital twin” publication-title: MRS Bull. doi: 10.1557/s43577-021-00214-0 contributor: fullname: Deagen – volume: 108 start-page: 123511 year: 2010 ident: ref_55 article-title: Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing publication-title: J. Appl. Phys. doi: 10.1063/1.3531562 contributor: fullname: Alberti – ident: ref_2 – volume: 94 start-page: 3563 year: 2018 ident: ref_5 article-title: Digital twin-driven product design, manufacturing and service with big data publication-title: Int. J. Adv. Manuf. Technol. doi: 10.1007/s00170-017-0233-1 contributor: fullname: Fei – ident: ref_15 – volume: 4 start-page: 056007 year: 2020 ident: ref_40 article-title: Phononic transport and simulations of annealing processes in nanometric complex structures publication-title: Phys. Rev. Mat. contributor: fullname: Sciuto – ident: ref_36 – volume: 150 start-page: 178 year: 2003 ident: ref_45 article-title: Factors Affecting Profile Evolution in Plasma Etching of SiO2: Modeling and Experimental Verification publication-title: J. Electrochem. Soc. doi: 10.1149/1.1602084 contributor: fullname: Garozzo – ident: ref_19 – volume: 124 start-page: 223103 year: 2018 ident: ref_60 article-title: A study of laser-induced surface defects in silicon and impact on electrical properties publication-title: J. Appl. Phys. doi: 10.1063/1.5058143 contributor: fullname: Sun – ident: ref_22 – volume: 62 start-page: 80 year: 2017 ident: ref_37 article-title: Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches publication-title: Mat. Sci. Sem. Proc. doi: 10.1016/j.mssp.2016.10.047 contributor: fullname: Lombardo – ident: ref_4 doi: 10.1201/b17476 – volume: 134 start-page: 103558 year: 2022 ident: ref_67 article-title: Implementation of digital twins in the process industry: A systematic literature review of enablers and barriers publication-title: Comput. Ind. doi: 10.1016/j.compind.2021.103558 contributor: fullname: Perno – volume: 121 start-page: 044302 year: 2017 ident: ref_39 article-title: Thermal transport at the nanoscale: A Fourier’s law vs. phonon Boltzmann equation study publication-title: J. Appl. Phys. doi: 10.1063/1.4974872 contributor: fullname: Kaiser |
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SubjectTerms | Artificial intelligence Atoms Case studies Computer simulation Computer-generated environments Crystal defects Datasets Design of experiments digital twin modules Digital twins Equilibrium finite element methods Heat treatment Interfaces Kinetic Monte Carlo Laser beam annealing Manufacturing Materials processing Modules Multiscale analysis multiscale modeling Nanotechnology devices Numerical methods Parameter modification Phase transitions Physical vapor deposition Process controls Process parameters process simulation Production costs Pulsed lasers Simulation Simulation methods Software Technology application Twins |
Title | Multiscale Simulations for Defect-Controlled Processing of Group IV Materials |
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