Multiscale Simulations for Defect-Controlled Processing of Group IV Materials

Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of “digital twins”, i.e., a comb...

Full description

Saved in:
Bibliographic Details
Published in:Crystals (Basel) Vol. 12; no. 12; p. 1701
Main Authors: Calogero, Gaetano, Deretzis, Ioannis, Fisicaro, Giuseppe, Kollmuß, Manuel, La Via, Francesco, Lombardo, Salvatore F., Schöler, Michael, Wellmann, Peter J., La Magna, Antonino
Format: Journal Article
Language:English
Published: Basel MDPI AG 01-12-2022
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of “digital twins”, i.e., a combined sequence of predictive chemical–physical simulations and trained black-box techniques, should ideally complement the real sequence of processes throughout all development and production stages, starting from the growth of materials, their functional manipulation and finally their integration in nano-devices. To achieve this framework, computational implementations at different space and time scales are necessary, ranging from the atomistic to the macro-scale. In this paper, we propose a general paradigm for the industrially driven computational modeling of materials by deploying a multiscale methodology based on physical–chemical simulations bridging macro, meso and atomic scale. We demonstrate its general applicability by studying two completely different processing examples, i.e., the growth of group IV crystals through physical vapor deposition and their thermal treatment through pulsed laser annealing. We indicate the suitable formalisms, as well as the advantages and critical issues associated with each scale, and show how numerical methods for the solution of the models could be coupled to achieve a complete and effective virtualization of the process. By connecting the process parameters to atomic scale modifications such as lattice defects or faceting, we highlight how a digital twin module can gain intrinsic predictivity far from the pre-assessed training conditions of black-box “Virtual Metrology” techniques.
AbstractList Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integration as modules of "digital twins", i.e., a combined sequence of predictive chemical-physical simulations and trained black-box techniques, should ideally complement the real sequence of processes throughout all development and production stages, starting from the growth of materials, their functional manipulation and finally their integration in nano-devices. To achieve this framework, computational implementations at different space and time scales are necessary, ranging from the atomistic to the macro-scale. In this paper, we propose a general paradigm for the industrially driven computational modeling of materials by deploying a multiscale methodology based on physical-chemical simulations bridging macro, meso and atomic scale. We demonstrate its general applicability by studying two completely different processing examples, i.e., the growth of group IV crystals through physical vapor deposition and their thermal treatment through pulsed laser annealing. We indicate the suitable formalisms, as well as the advantages and critical issues associated with each scale, and show how numerical methods for the solution of the models could be coupled to achieve a complete and effective virtualization of the process. By connecting the process parameters to atomic scale modifications such as lattice defects or faceting, we highlight how a digital twin module can gain intrinsic predictivity far from the pre-assessed training conditions of black-box "Virtual Metrology" techniques.
Audience Academic
Author La Via, Francesco
Lombardo, Salvatore F.
Deretzis, Ioannis
Fisicaro, Giuseppe
Calogero, Gaetano
Schöler, Michael
Wellmann, Peter J.
Kollmuß, Manuel
La Magna, Antonino
Author_xml – sequence: 1
  givenname: Gaetano
  orcidid: 0000-0003-3610-3231
  surname: Calogero
  fullname: Calogero, Gaetano
– sequence: 2
  givenname: Ioannis
  orcidid: 0000-0001-7252-1831
  surname: Deretzis
  fullname: Deretzis, Ioannis
– sequence: 3
  givenname: Giuseppe
  orcidid: 0000-0003-4502-3882
  surname: Fisicaro
  fullname: Fisicaro, Giuseppe
– sequence: 4
  givenname: Manuel
  orcidid: 0000-0001-6535-1635
  surname: Kollmuß
  fullname: Kollmuß, Manuel
– sequence: 5
  givenname: Francesco
  orcidid: 0000-0002-6842-581X
  surname: La Via
  fullname: La Via, Francesco
– sequence: 6
  givenname: Salvatore F.
  orcidid: 0000-0003-1877-2706
  surname: Lombardo
  fullname: Lombardo, Salvatore F.
– sequence: 7
  givenname: Michael
  orcidid: 0000-0002-5272-4954
  surname: Schöler
  fullname: Schöler, Michael
– sequence: 8
  givenname: Peter J.
  orcidid: 0000-0002-2180-1507
  surname: Wellmann
  fullname: Wellmann, Peter J.
– sequence: 9
  givenname: Antonino
  orcidid: 0000-0002-4087-5210
  surname: La Magna
  fullname: La Magna, Antonino
BookMark eNp1UU1rGzEQFSWBpm6OvS_0vI6-VrN7DG7rGGJaaNqrkGclI7NeuZL24H8fxQ4hDURzGDG89-ZJ7xO5GMNoCfnC6FyIjt5gPKbMeCmg7AO54hRELUXDL17dP5LrlHa0HFAUgF2R9Xoask9oBlv99vtpMNmHMVUuxOqbdRZzvQhjjmEYbF_9igFtSn7cVsFVyximQ7X6W61NttGbIX0ml640e_3cZ-TPj-8Pi7v6_udytbi9r1HSLteNoh3jCIyDoYjMQN9T3IDifdd3FCRveSuF5IiybZVCDuVhxqDFDW8ZiBlZnXX7YHb6EP3exKMOxuvTIMStNjF7HKx2VkHLmKIbCdKopmsFUN4wo5RzojFF6-tZ6xDDv8mmrHdhimOxrzk0SkFhtAU1P6O25ae0H13I0WCp3u49liicL_NbkI3sugaeLNZnAsaQUrTuxSaj-ikx_V9iBS_e4NHnUxhlkR_eYT0CbUKaBA
CitedBy_id crossref_primary_10_3390_s23146249
crossref_primary_10_3390_cryst14020125
crossref_primary_10_1016_j_mssp_2023_107792
Cites_doi 10.1021/acs.jpcc.9b10874
10.1103/PhysRevApplied.18.034045
10.1016/j.apsusc.2019.144470
10.1002/nme.2579
10.1038/s41563-020-00913-0
10.1103/PhysRevLett.121.265701
10.1016/j.measen.2021.100046
10.1016/0021-9991(88)90002-2
10.1016/j.eswa.2009.05.053
10.1109/TED.2011.2114666
10.1116/1.4853675
10.1039/D1TA02535J
10.1007/s00340-017-6677-z
10.1016/j.compchemeng.2019.05.016
10.1063/1.1746879
10.1016/0956-7151(92)90103-L
10.1016/S0022-0248(99)00771-X
10.1063/1.1906318
10.1063/1.4818630
10.1063/1.5132300
10.1103/PhysRevE.78.031605
10.1002/crat.2170280416
10.1002/9783527824724
10.1016/S0022-0248(98)01215-9
10.1016/j.ces.2010.06.004
10.1016/j.apsusc.2020.148218
10.1016/j.apsusc.2020.146752
10.4028/www.scientific.net/MSF.821-823.77
10.1116/1.4966606
10.1063/1.5008362
10.1016/j.optmat.2018.06.068
10.1021/nl4042438
10.1021/acs.cgd.1c00343
10.1021/acs.nanolett.5b03781
10.1109/ICMLA.2013.186
10.1088/1361-6641/aad831
10.1016/0927-0256(95)00047-T
10.1038/s41524-022-00720-y
10.1002/crat.201900121
10.1016/S1079-4050(96)80006-8
10.1016/j.compind.2021.103508
10.1002/pssa.201800597
10.1103/PhysRevE.57.4323
10.1143/JJAP.44.8650
10.3390/ma14164769
10.1557/s43577-021-00214-0
10.1063/1.3531562
10.1007/s00170-017-0233-1
10.1149/1.1602084
10.1063/1.5058143
10.1016/j.mssp.2016.10.047
10.1201/b17476
10.1016/j.compind.2021.103558
10.1063/1.4974872
ContentType Journal Article
Copyright COPYRIGHT 2022 MDPI AG
2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
Copyright_xml – notice: COPYRIGHT 2022 MDPI AG
– notice: 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
DBID AAYXX
CITATION
7SR
8BQ
8FD
8FE
8FG
ABJCF
ABUWG
AFKRA
AZQEC
BENPR
BGLVJ
CCPQU
D1I
DWQXO
HCIFZ
JG9
KB.
PDBOC
PIMPY
PQEST
PQQKQ
PQUKI
PRINS
DOA
DOI 10.3390/cryst12121701
DatabaseName CrossRef
Engineered Materials Abstracts
METADEX
Technology Research Database
ProQuest SciTech Collection
ProQuest Technology Collection
Materials Science & Engineering Collection
ProQuest Central (Alumni)
ProQuest Central
ProQuest Central Essentials
ProQuest Central
Technology Collection
ProQuest One Community College
ProQuest Materials Science Collection
ProQuest Central Korea
SciTech Premium Collection
Materials Research Database
Materials Science Database
Materials Science Collection
Publicly Available Content Database
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
Directory of Open Access Journals
DatabaseTitle CrossRef
Publicly Available Content Database
ProQuest Materials Science Collection
Materials Research Database
Technology Collection
Technology Research Database
ProQuest Central Essentials
ProQuest One Academic Eastern Edition
Materials Science Collection
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Technology Collection
ProQuest SciTech Collection
ProQuest Central China
METADEX
ProQuest Central
Engineered Materials Abstracts
ProQuest One Academic UKI Edition
ProQuest Central Korea
Materials Science & Engineering Collection
Materials Science Database
ProQuest One Academic
DatabaseTitleList
Publicly Available Content Database
CrossRef

Database_xml – sequence: 1
  dbid: DOA
  name: Directory of Open Access Journals
  url: http://www.doaj.org/
  sourceTypes: Open Website
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
EISSN 2073-4352
ExternalDocumentID oai_doaj_org_article_fe6781160b474a6598370251a66ff35a
A745499577
10_3390_cryst12121701
n/a
GroupedDBID .4S
5VS
8FE
8FG
AADQD
AAFWJ
ABJCF
ADBBV
AENEX
AFKRA
AFPKN
AFZYC
ALMA_UNASSIGNED_HOLDINGS
ARCSS
BCNDV
BENPR
BGLVJ
CCPQU
D1I
EDO
GROUPED_DOAJ
HCIFZ
IAO
IPNFZ
ITC
KB.
KQ8
MODMG
M~E
OK1
PDBOC
PIMPY
PROAC
RIG
TUS
AAYXX
CITATION
7SR
8BQ
8FD
ABUWG
AZQEC
DWQXO
JG9
PQEST
PQQKQ
PQUKI
PRINS
ID FETCH-LOGICAL-c409t-560912c7127a0cc1a7dd0cb762d9d907428284342cc48866c27212aacecb28173
IEDL.DBID DOA
ISSN 2073-4352
IngestDate Tue Oct 22 15:10:10 EDT 2024
Thu Oct 10 18:02:26 EDT 2024
Tue Nov 12 22:53:01 EST 2024
Fri Nov 22 02:34:03 EST 2024
Tue Jul 23 14:11:54 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 12
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c409t-560912c7127a0cc1a7dd0cb762d9d907428284342cc48866c27212aacecb28173
ORCID 0000-0003-4502-3882
0000-0001-6535-1635
0000-0002-5272-4954
0000-0002-6842-581X
0000-0002-2180-1507
0000-0002-4087-5210
0000-0003-3610-3231
0000-0003-1877-2706
0000-0001-7252-1831
OpenAccessLink https://doaj.org/article/fe6781160b474a6598370251a66ff35a
PQID 2756679838
PQPubID 2032412
ParticipantIDs doaj_primary_oai_doaj_org_article_fe6781160b474a6598370251a66ff35a
proquest_journals_2756679838
gale_infotracacademiconefile_A745499577
crossref_primary_10_3390_cryst12121701
crossref_citationtrail_10_3390_cryst12121701
PublicationCentury 2000
PublicationDate 2022-12-01
PublicationDateYYYYMMDD 2022-12-01
PublicationDate_xml – month: 12
  year: 2022
  text: 2022-12-01
  day: 01
PublicationDecade 2020
PublicationPlace Basel
PublicationPlace_xml – name: Basel
PublicationTitle Crystals (Basel)
PublicationYear 2022
Publisher MDPI AG
Publisher_xml – name: MDPI AG
References ref_58
Penazzi (ref_66) 2011; 58
Cheimarios (ref_12) 2010; 65
Lombardo (ref_42) 2018; 123
Lovarelli (ref_65) 2022; 18
Alberti (ref_18) 2019; 216
ref_19
ref_17
Smecca (ref_31) 2021; 9
Dagault (ref_62) 2020; 527
Deagen (ref_3) 2022; 47
ref_15
Alippi (ref_29) 2005; 86
Kang (ref_7) 2009; 36
Suthar (ref_8) 2019; 127
Pateau (ref_27) 2014; 32
Huet (ref_54) 2020; 505
Osano (ref_43) 2005; 44
Danielsson (ref_13) 2020; 124
Stiffler (ref_52) 1992; 40
ref_24
ref_23
Steiner (ref_16) 2020; 55
ref_22
Karma (ref_53) 1998; 57
Avrov (ref_34) 1999; 198–199
Geuzaine (ref_25) 2009; 79
Cale (ref_47) 1996; 22
Kaiser (ref_39) 2017; 121
Colombo (ref_38) 2015; 15
Calogero (ref_21) 2022; 8
Garozzo (ref_45) 2003; 150
Buta (ref_63) 2008; 78
Fish (ref_11) 2021; 20
Choi (ref_10) 2021; 16
ref_36
Escoffery (ref_30) 1964; 35
ref_32
Bonati (ref_61) 2018; 121
Lombardo (ref_37) 2017; 62
Haidar (ref_26) 2016; 34
Osher (ref_44) 1988; 79
Hribernik (ref_64) 2021; 133
Almeida (ref_51) 2018; 84
Alberti (ref_55) 2010; 108
Fisicaro (ref_28) 2014; 11
Wellmann (ref_46) 2018; 33
Zhang (ref_41) 2017; 123
Lilov (ref_48) 1993; 28
Fisicaro (ref_14) 2020; 7
Perno (ref_67) 2022; 134
Sciuto (ref_40) 2020; 4
Qiu (ref_49) 2014; 14
Mauceri (ref_59) 2021; 21
Ma (ref_33) 2000; 211
Rankl (ref_35) 2015; 821–823
Sun (ref_60) 2018; 124
ref_1
ref_2
Alberti (ref_56) 2013; 114
Sanzaro (ref_57) 2021; 539
Cerny (ref_50) 1995; 4
ref_9
Fei (ref_5) 2018; 94
(ref_20) 2015; 3
ref_4
ref_6
References_xml – volume: 124
  start-page: 7725
  year: 2020
  ident: ref_13
  article-title: A Systematic Method for Predictive In Silico Chemical Vapor Deposition
  publication-title: J. Phys. Chem. C
  doi: 10.1021/acs.jpcc.9b10874
  contributor:
    fullname: Danielsson
– volume: 18
  start-page: 034045
  year: 2022
  ident: ref_65
  article-title: Multiscale Pseudoatomistic Quantum Transport Modeling for van der Waals Heterostructures
  publication-title: Phys. Rev. Appl.
  doi: 10.1103/PhysRevApplied.18.034045
  contributor:
    fullname: Lovarelli
– volume: 505
  start-page: 144470
  year: 2020
  ident: ref_54
  article-title: Pulsed laser annealing for advanced technology nodes: Modeling and calibration
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2019.144470
  contributor:
    fullname: Huet
– volume: 3
  start-page: 9
  year: 2015
  ident: ref_20
  article-title: The fenics project version 1.5
  publication-title: Arch. Numer. Softw.
– volume: 79
  start-page: 1309
  year: 2009
  ident: ref_25
  article-title: Gmsh: A 3-d finite element mesh generator with built-in pre- and post-processing facilities
  publication-title: Int. J. Numer. Methods Eng.
  doi: 10.1002/nme.2579
  contributor:
    fullname: Geuzaine
– volume: 20
  start-page: 774l
  year: 2021
  ident: ref_11
  article-title: Mesoscopic and multiscale modelling in materials
  publication-title: Nat. Mater.
  doi: 10.1038/s41563-020-00913-0
  contributor:
    fullname: Fish
– volume: 121
  start-page: 265701
  year: 2018
  ident: ref_61
  article-title: Silicon Liquid Structure and Crystal Nucleation from Ab Initio Deep Metadynamics
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.121.265701
  contributor:
    fullname: Bonati
– volume: 16
  start-page: 100046
  year: 2021
  ident: ref_10
  article-title: Machine learning-based virtual metrology on film thickness in amorphous carbon layer deposition process
  publication-title: Meas. Sens.
  doi: 10.1016/j.measen.2021.100046
  contributor:
    fullname: Choi
– volume: 79
  start-page: 12
  year: 1988
  ident: ref_44
  article-title: Fronts propagating with curvature-dependent speed: Algorithms based on Hamilton-Jacobi formulations
  publication-title: J. Comp. Phys.
  doi: 10.1016/0021-9991(88)90002-2
  contributor:
    fullname: Osher
– ident: ref_1
– volume: 36
  start-page: 12554
  year: 2009
  ident: ref_7
  article-title: A virtual metrology system for semiconductor manufacturing
  publication-title: Exp. Sys. Appl.
  doi: 10.1016/j.eswa.2009.05.053
  contributor:
    fullname: Kang
– ident: ref_23
– volume: 58
  start-page: 1425
  year: 2011
  ident: ref_66
  article-title: The Multiscale Paradigm in Electronic Device Simulation
  publication-title: IEEE Trans. Elec. Dev.
  doi: 10.1109/TED.2011.2114666
  contributor:
    fullname: Penazzi
– volume: 32
  start-page: 021303
  year: 2014
  ident: ref_27
  article-title: Modeling of inductively coupled plasma SF6/O2/Ar plasma discharge: Effect of O2 on the plasma kinetic properties
  publication-title: J. Vac. Sci. Technol. A
  doi: 10.1116/1.4853675
  contributor:
    fullname: Pateau
– volume: 9
  start-page: 16456
  year: 2021
  ident: ref_31
  article-title: Two-step MAPbI3 deposition by low-vacuum proximity-space-effusion for high-efficiency inverted semitransparent perovskite solar cells
  publication-title: J. Mater. Chem. A
  doi: 10.1039/D1TA02535J
  contributor:
    fullname: Smecca
– volume: 123
  start-page: 86
  year: 2017
  ident: ref_41
  article-title: Transient reflectivity measurement of photocarrier dynamics in GaSe thin films
  publication-title: Appl. Phys. B
  doi: 10.1007/s00340-017-6677-z
  contributor:
    fullname: Zhang
– volume: 127
  start-page: 140
  year: 2019
  ident: ref_8
  article-title: Next-generation virtual metrology for semiconductor manufacturing: A feature-based framework
  publication-title: Comp. Chem. Eng.
  doi: 10.1016/j.compchemeng.2019.05.016
  contributor:
    fullname: Suthar
– volume: 35
  start-page: 913
  year: 1964
  ident: ref_30
  article-title: Improved Knudsen-Cell Vapor Source for Vacuum Depositions
  publication-title: Rev. Sci. Instrum.
  doi: 10.1063/1.1746879
  contributor:
    fullname: Escoffery
– volume: 40
  start-page: 401617
  year: 1992
  ident: ref_52
  article-title: Interfacial transport kinetics during the solidification of silicon
  publication-title: Acta Metall. Mater.
  doi: 10.1016/0956-7151(92)90103-L
  contributor:
    fullname: Stiffler
– volume: 211
  start-page: 352
  year: 2000
  ident: ref_33
  article-title: Modeling of silicon carbide crystal growth by physical vapor transport method
  publication-title: J. Cryst. Growth
  doi: 10.1016/S0022-0248(99)00771-X
  contributor:
    fullname: Ma
– volume: 11
  start-page: 109
  year: 2014
  ident: ref_28
  article-title: Atomic scale Monte Carlo simulations of BF3 plasma immersion ion implantation in Si
  publication-title: Phys. Stat. Sol. C
  contributor:
    fullname: Fisicaro
– volume: 86
  start-page: 161905
  year: 2005
  ident: ref_29
  article-title: Role of light scattering in excimer laser annealing of Si
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1906318
  contributor:
    fullname: Alippi
– volume: 114
  start-page: 121301
  year: 2013
  ident: ref_56
  article-title: Role of the early stages of Ni-Si interaction on the structural properties of the reaction products
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4818630
  contributor:
    fullname: Alberti
– volume: 7
  start-page: 021402
  year: 2020
  ident: ref_14
  article-title: Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
  publication-title: Appl. Phys. Rev.
  doi: 10.1063/1.5132300
  contributor:
    fullname: Fisicaro
– volume: 78
  start-page: 031605
  year: 2008
  ident: ref_63
  article-title: Atomistic simulation study of the structure and dynamics of a faceted crystal-melt interface
  publication-title: Phys. Rev. E
  doi: 10.1103/PhysRevE.78.031605
  contributor:
    fullname: Buta
– volume: 28
  start-page: 503
  year: 1993
  ident: ref_48
  article-title: Thermodynamic analysis of the Gas Phase at the Dissociative Evaporation of Silicon Carbide
  publication-title: Cryst. Res. Technol
  doi: 10.1002/crat.2170280416
  contributor:
    fullname: Lilov
– ident: ref_32
  doi: 10.1002/9783527824724
– ident: ref_17
– volume: 198–199
  start-page: 1011
  year: 1999
  ident: ref_34
  article-title: The analysis of mass transfer in system beta-SiC—Alpha-SiC under silicon carbide sublimation growth
  publication-title: J. Cryst. Growth
  doi: 10.1016/S0022-0248(98)01215-9
  contributor:
    fullname: Avrov
– volume: 65
  start-page: 5018
  year: 2010
  ident: ref_12
  article-title: Multiscale modeling in chemical vapor deposition processes: Coupling reactor scale with feature scale computations
  publication-title: Chem. Eng. Sci.
  doi: 10.1016/j.ces.2010.06.004
  contributor:
    fullname: Cheimarios
– volume: 539
  start-page: 148218
  year: 2021
  ident: ref_57
  article-title: Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2020.148218
  contributor:
    fullname: Sanzaro
– ident: ref_24
– volume: 527
  start-page: 146752
  year: 2020
  ident: ref_62
  article-title: Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers
  publication-title: Appl. Surf. Sci.
  doi: 10.1016/j.apsusc.2020.146752
  contributor:
    fullname: Dagault
– volume: 821–823
  start-page: 77
  year: 2015
  ident: ref_35
  article-title: Quantitative Study of the Role of Supersaturation during Sublimation Growth on the Yield of 50 mm 3C-SiC
  publication-title: Mater. Sci. Forum
  doi: 10.4028/www.scientific.net/MSF.821-823.77
  contributor:
    fullname: Rankl
– volume: 34
  start-page: 061306
  year: 2016
  ident: ref_26
  article-title: Simulation of cryogenic silicon etching under SF6/O2/Ar plasma discharge
  publication-title: J. Vac. Sci. Technol.
  doi: 10.1116/1.4966606
  contributor:
    fullname: Haidar
– volume: 123
  start-page: 105105
  year: 2018
  ident: ref_42
  article-title: Phase field model of the nanoscale evolution during the explosive crystallization phenomenon
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5008362
  contributor:
    fullname: Lombardo
– volume: 84
  start-page: 259
  year: 2018
  ident: ref_51
  article-title: Sub-wavelength self-organization of chalcogenide glass by direct laser writing
  publication-title: Opt. Mat.
  doi: 10.1016/j.optmat.2018.06.068
  contributor:
    fullname: Almeida
– volume: 14
  start-page: 1769
  year: 2014
  ident: ref_49
  article-title: Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon
  publication-title: Nano Lett.
  doi: 10.1021/nl4042438
  contributor:
    fullname: Qiu
– volume: 21
  start-page: 4046
  year: 2021
  ident: ref_59
  article-title: Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
  publication-title: Cryst. Growth Des.
  doi: 10.1021/acs.cgd.1c00343
  contributor:
    fullname: Mauceri
– volume: 15
  start-page: 8255
  year: 2015
  ident: ref_38
  article-title: Thermal Rectification by Design in Telescopic Si Nanowires
  publication-title: Nano Lett.
  doi: 10.1021/acs.nanolett.5b03781
  contributor:
    fullname: Colombo
– ident: ref_9
  doi: 10.1109/ICMLA.2013.186
– volume: 33
  start-page: 103001
  year: 2018
  ident: ref_46
  article-title: Review of SiC crystal growth technology
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/1361-6641/aad831
  contributor:
    fullname: Wellmann
– volume: 4
  start-page: 269
  year: 1995
  ident: ref_50
  article-title: Numerical simulation of the formation of Ni silicides induced by pulsed lasers
  publication-title: Comp. Mat. Sci.
  doi: 10.1016/0927-0256(95)00047-T
  contributor:
    fullname: Cerny
– volume: 8
  start-page: 36
  year: 2022
  ident: ref_21
  article-title: Multiscale modeling of ultrafast melting phenomena
  publication-title: npj Comput. Mater.
  doi: 10.1038/s41524-022-00720-y
  contributor:
    fullname: Calogero
– volume: 55
  start-page: 1900121
  year: 2020
  ident: ref_16
  article-title: Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
  publication-title: Cryst. Res. Technol.
  doi: 10.1002/crat.201900121
  contributor:
    fullname: Steiner
– volume: 22
  start-page: 175
  year: 1996
  ident: ref_47
  article-title: Feature scale transport and reaction during low-pressure deposition processes
  publication-title: Thin Film.
  doi: 10.1016/S1079-4050(96)80006-8
  contributor:
    fullname: Cale
– volume: 133
  start-page: 103508
  year: 2021
  ident: ref_64
  article-title: Autonomous, context-aware, adaptive Digital Twins—State of the art and roadmap
  publication-title: Comput. Ind.
  doi: 10.1016/j.compind.2021.103508
  contributor:
    fullname: Hribernik
– volume: 216
  start-page: 1800597
  year: 2019
  ident: ref_18
  article-title: Simulation of the growth kinetics in group IV compound semiconductors
  publication-title: Phys. Status Solidi A
  doi: 10.1002/pssa.201800597
  contributor:
    fullname: Alberti
– volume: 57
  start-page: 4323
  year: 1998
  ident: ref_53
  article-title: Quantitative phase-field modeling of dendritic growth in two and three dimensions
  publication-title: Phys. Rev. E
  doi: 10.1103/PhysRevE.57.4323
  contributor:
    fullname: Karma
– volume: 44
  start-page: 8650
  year: 2005
  ident: ref_43
  article-title: An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.44.8650
  contributor:
    fullname: Osano
– ident: ref_6
– ident: ref_58
  doi: 10.3390/ma14164769
– volume: 47
  start-page: 379
  year: 2022
  ident: ref_3
  article-title: The materials tetrahedron has a “digital twin”
  publication-title: MRS Bull.
  doi: 10.1557/s43577-021-00214-0
  contributor:
    fullname: Deagen
– volume: 108
  start-page: 123511
  year: 2010
  ident: ref_55
  article-title: Nickel-affected silicon crystallization and silicidation on polyimide by multipulse excimer laser annealing
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3531562
  contributor:
    fullname: Alberti
– ident: ref_2
– volume: 94
  start-page: 3563
  year: 2018
  ident: ref_5
  article-title: Digital twin-driven product design, manufacturing and service with big data
  publication-title: Int. J. Adv. Manuf. Technol.
  doi: 10.1007/s00170-017-0233-1
  contributor:
    fullname: Fei
– ident: ref_15
– volume: 4
  start-page: 056007
  year: 2020
  ident: ref_40
  article-title: Phononic transport and simulations of annealing processes in nanometric complex structures
  publication-title: Phys. Rev. Mat.
  contributor:
    fullname: Sciuto
– ident: ref_36
– volume: 150
  start-page: 178
  year: 2003
  ident: ref_45
  article-title: Factors Affecting Profile Evolution in Plasma Etching of SiO2: Modeling and Experimental Verification
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.1602084
  contributor:
    fullname: Garozzo
– ident: ref_19
– volume: 124
  start-page: 223103
  year: 2018
  ident: ref_60
  article-title: A study of laser-induced surface defects in silicon and impact on electrical properties
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.5058143
  contributor:
    fullname: Sun
– ident: ref_22
– volume: 62
  start-page: 80
  year: 2017
  ident: ref_37
  article-title: Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches
  publication-title: Mat. Sci. Sem. Proc.
  doi: 10.1016/j.mssp.2016.10.047
  contributor:
    fullname: Lombardo
– ident: ref_4
  doi: 10.1201/b17476
– volume: 134
  start-page: 103558
  year: 2022
  ident: ref_67
  article-title: Implementation of digital twins in the process industry: A systematic literature review of enablers and barriers
  publication-title: Comput. Ind.
  doi: 10.1016/j.compind.2021.103558
  contributor:
    fullname: Perno
– volume: 121
  start-page: 044302
  year: 2017
  ident: ref_39
  article-title: Thermal transport at the nanoscale: A Fourier’s law vs. phonon Boltzmann equation study
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4974872
  contributor:
    fullname: Kaiser
SSID ssj0000760771
Score 2.3092895
Snippet Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for...
SourceID doaj
proquest
gale
crossref
SourceType Open Website
Aggregation Database
Index Database
StartPage 1701
SubjectTerms Artificial intelligence
Atoms
Case studies
Computer simulation
Computer-generated environments
Crystal defects
Datasets
Design of experiments
digital twin modules
Digital twins
Equilibrium
finite element methods
Heat treatment
Interfaces
Kinetic Monte Carlo
Laser beam annealing
Manufacturing
Materials processing
Modules
Multiscale analysis
multiscale modeling
Nanotechnology devices
Numerical methods
Parameter modification
Phase transitions
Physical vapor deposition
Process controls
Process parameters
process simulation
Production costs
Pulsed lasers
Simulation
Simulation methods
Software
Technology application
Twins
Title Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
URI https://www.proquest.com/docview/2756679838
https://doaj.org/article/fe6781160b474a6598370251a66ff35a
Volume 12
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://sdu.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV07T8MwELagEwyIpygU5AHBQoRju3YylhZUhrLwEJvlOLaEVFrUpAP_njsnVDAgFlbLkew7--6--O47Qs6EYiIEyZNceQsAhYkkDzJNwNsWMJz1ZcyqHD_o-5dsdIM0OatWX5gT1tADN4K7Cl5hMaRihdTSqn6ObC3glK1SIYh-Exox9Q1MRRusFdM6bUg1BeD6K7f4qOoUDDUSkP9wQpGr_zeLHN3M7TbZauNDOmjWtUPW_GyXbH5jDdwjk1g0W4FwPX14fWv7b1UUwk868piekQybBPSpL2lbCQBf0nmg8VcTvXumE1s3Z2-fPN3ePA7HSdsVIXGAxeoEQpQ85U6nXFvmXGp1WTJXgFEr8zJCXQBRUkjuHFxOpRwHkMetdd4VPEu1OCCd2XzmDwllLMjSO-F5UNLmoihyi-98PgWPlbmySy6_xGRcSxmOnSumBqADStX8kGqXnK-mvzdcGb9NvEaZryYhxXUcAMWbVvHmL8V3yQVqzOBFhEU529YTwNaQ0soMtETs29e6S3pfSjXtDa0M0t7jC5TIjv5jNcdkg2NhREx06ZFOvVj6E7JelcvTeDI_Aapl5D8
link.rule.ids 315,782,786,866,2106,27933,27934
linkProvider Directory of Open Access Journals
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Multiscale+Simulations+for+Defect-Controlled+Processing+of+Group+IV+Materials&rft.jtitle=Crystals+%28Basel%29&rft.au=Calogero%2C+Gaetano&rft.au=Deretzis%2C+Ioannis&rft.au=Fisicaro%2C+Giuseppe&rft.au=Kollmu%C3%9F%2C+Manuel&rft.date=2022-12-01&rft.pub=MDPI+AG&rft.eissn=2073-4352&rft.volume=12&rft.issue=12&rft.spage=1701&rft_id=info:doi/10.3390%2Fcryst12121701&rft.externalDBID=HAS_PDF_LINK
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2073-4352&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2073-4352&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2073-4352&client=summon