An RDS, LEED, and STM Study of MOCVD-Prepared Si(1 0 0) surfaces

• Published in: Journal of crystal growth Vol. 272; no. 1; pp. 24 - 29
• Main Authors: Hannappel, T., McMahon, W.E., Olson, J.M.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2004
• Subjects: A1. Adsorption; A1. Reflectance difference spectroscopy; A1. Scanning tunneling microscopy; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III–V materials; B2. Semiconducting silicon; 68.37 Ef; A1. Scanning tunneling microscopy; 68.43.Fg; 81.05.Cy; B2. Semiconducting III–V materials; A3. Metalorganic chemical vapor deposition; A1. Adsorption; 81.15.Gh; A1. Reflectance difference spectroscopy; 61.14.Hg; B2. Semiconducting silicon
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2004.08.043

Clean, As- and P-terminated Si(1
0
0) surfaces were prepared with H
2 carrier gas and AsH
3 and PH
3 as precursors in an MOCVD chamber. Reflectance difference spectra (RDS) were taken in situ. Samples were then transferred under vacuum to an ultrahigh-vacuum (UHV) chamber for analysis with AES, LEED, and STM. Clean, As-terminated Si(1
0
0) surfaces were achieved by annealing the sample at
T<900
°C supplying either AsH
3 or hydrogen (plus background As
x
). Various preparation procedures were applied and benchmarked in UHV. Extended annealing under AsH
3 led to strongly faceted surfaces whereas AsH
3 flow of moderate concentration, temperature, and time led to flat, two-domain, (2×1)/(1×2) reconstructed surfaces. RD spectra almost identical to RD spectra of As/Si(1
0
0) surfaces prepared in UHV with MBE were obtained by annealing the samples under AsH
3. Annealing under PH
3 supply bore a new, two-domain (6×3)/(3×6) surface reconstruction at low flows, and a SiP compound at high flows.