Impact of Electrolyte Incorporation in Anodized Niobium on Its Resistive Switching

The aim of this study was to develop memristors based on Nb O grown by a simple and inexpensive electrochemical anodization process. It was confirmed that the electrolyte selection plays a crucial role in resistive switching due to electrolyte species incorporation in oxide, thus influencing the for...

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Bibliographic Details
Published in:	Nanomaterials (Basel, Switzerland) Vol. 12; no. 5; p. 813
Main Authors:	Zrinski, Ivana, Löfler, Marvin, Zavašnik, Janez, Cancellieri, Claudia, Jeurgens, Lars P H, Hassel, Achim Walter, Mardare, Andrei Ionut
Format:	Journal Article
Language:	English
Published:	Switzerland MDPI AG 28-02-2022 MDPI
Subjects:	anodic oxide Bias Buffers Chemical composition Crystal structure Electric properties Electrochemistry Electrodes Electrolytes Energy Filaments memristor Memristors Niobium niobium oxide Niobium oxides Phase composition Retention Software Spectrum analysis Switching Thin films valve metals Netherlands United Kingdom > UK Japan Germany valve metals anodic oxide niobium oxide memristor
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