Separation of film thickness and grain boundary strengthening effects in Al thin films on Si

We have measured stress variations with temperature as a function of film thickness and a given grain size in pure Al and Al–0.5% Cu films on Si substrates. The variation in thickness for a given grain size is brought about by using the same film and the repeated controlled growth and dissolution of...

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Bibliographic Details
Published in:Journal of materials research Vol. 7; no. 8; pp. 2040 - 2048
Main Authors: Venkatraman, Ramnath, Bravman, John C.
Format: Journal Article
Language:English
Published: New York, USA Cambridge University Press 01-08-1992
Materials Research Society
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