Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1)
Fe films of different thicknesses were deposited on wurtzite GaN(0 0 0 1) layers by electron beam evaporation. They were studied by a number of characterization techniques such as low-energy electron diffraction (LEED), X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford backscatterin...
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Published in: | Journal of crystal growth Vol. 283; no. 3; pp. 500 - 507 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Amsterdam
Elsevier B.V
01-10-2005
Elsevier |
Subjects: | |
Online Access: | Get full text |
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Summary: | Fe films of different thicknesses were deposited on wurtzite GaN(0
0
0
1) layers by electron beam evaporation. They were studied by a number of characterization techniques such as low-energy electron diffraction (LEED), X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), and ferromagnetic resonance (FMR). Despite the large lattice mismatch between Fe and wurtzite GaN a clear epitaxial relation was determined. Three distinct Fe domain orientations were found rotated by
120
∘
relative to each other. Due to the formation of crystalline domains a hexagonal in-plane magnetic anisotropy was observed. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2005.06.004 |