Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1)

Fe films of different thicknesses were deposited on wurtzite GaN(0 0 0 1) layers by electron beam evaporation. They were studied by a number of characterization techniques such as low-energy electron diffraction (LEED), X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford backscatterin...

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Bibliographic Details
Published in:Journal of crystal growth Vol. 283; no. 3; pp. 500 - 507
Main Authors: Meijers, R., Calarco, R., Kaluza, N., Hardtdegen, H., Ahe, M.v.d., Bay, H.L., Lüth, H., Buchmeier, M., Bürgler, D.E.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-10-2005
Elsevier
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Summary:Fe films of different thicknesses were deposited on wurtzite GaN(0 0 0 1) layers by electron beam evaporation. They were studied by a number of characterization techniques such as low-energy electron diffraction (LEED), X-ray diffraction (XRD), atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), and ferromagnetic resonance (FMR). Despite the large lattice mismatch between Fe and wurtzite GaN a clear epitaxial relation was determined. Three distinct Fe domain orientations were found rotated by 120 ∘ relative to each other. Due to the formation of crystalline domains a hexagonal in-plane magnetic anisotropy was observed.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2005.06.004