Fundamentals of planar-type inductively coupled thermal plasmas on a substrate for large-area material processing
In this work, the fundamentals of planar-type Ar inductively coupled thermal plasmas (ICTPs) with oxygen molecular gas on a substrate have been studied. Previously, aiming at large-area material processing, we developed a planar-type ICTP torch with a rectangular quartz vessel instead of a conventio...
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Published in: | Japanese Journal of Applied Physics Vol. 55; no. 7S2; pp. 7 - 07LB03 |
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The Japan Society of Applied Physics
01-07-2016
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Abstract | In this work, the fundamentals of planar-type Ar inductively coupled thermal plasmas (ICTPs) with oxygen molecular gas on a substrate have been studied. Previously, aiming at large-area material processing, we developed a planar-type ICTP torch with a rectangular quartz vessel instead of a conventional cylindrical tube. For the adoption of such planar-type ICTP to material processing, it is necessary to sustain the ICTP with molecular gases on a substrate stably and uniformly. To determine the uniformity of the ICTP formed on the substrate, spectroscopic observation was carried out at 3 mm above the substrate. Results showed that the radiation intensities of specified O atomic lines were almost uniformly detected along the surface of the substrate. This means that excited O atoms, which are important radicals for thermal plasma oxidation, are present in the planar-type ICTP uniformly on the substrate. |
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AbstractList | In this work, the fundamentals of planar-type Ar inductively coupled thermal plasmas (ICTPs) with oxygen molecular gas on a substrate have been studied. Previously, aiming at large-area material processing, we developed a planar-type ICTP torch with a rectangular quartz vessel instead of a conventional cylindrical tube. For the adoption of such planar-type ICTP to material processing, it is necessary to sustain the ICTP with molecular gases on a substrate stably and uniformly. To determine the uniformity of the ICTP formed on the substrate, spectroscopic observation was carried out at 3 mm above the substrate. Results showed that the radiation intensities of specified O atomic lines were almost uniformly detected along the surface of the substrate. This means that excited O atoms, which are important radicals for thermal plasma oxidation, are present in the planar-type ICTP uniformly on the substrate. |
Author | Irie, Hiromitsu Tanaka, Yasunori Tial, Mai Kai Suan Maruyama, Yuji Uesugi, Yoshihiko Ishijima, Tatsuo |
Author_xml | – sequence: 1 givenname: Mai Kai Suan surname: Tial fullname: Tial, Mai Kai Suan email: maikai@stu.kanazawa-ac.jp organization: Kanazawa University Faculty of Electrical and Computer Engineering, Kanazawa 920-1192, Japan – sequence: 2 givenname: Hiromitsu surname: Irie fullname: Irie, Hiromitsu organization: Kanazawa University Faculty of Electrical and Computer Engineering, Kanazawa 920-1192, Japan – sequence: 3 givenname: Yuji surname: Maruyama fullname: Maruyama, Yuji organization: Kanazawa University Faculty of Electrical and Computer Engineering, Kanazawa 920-1192, Japan – sequence: 4 givenname: Yasunori surname: Tanaka fullname: Tanaka, Yasunori email: tanaka@ec.t.kanazawa-u.ac.jp organization: Kanazawa University Research Center for Sustainable Energy and Technology, Kanazawa 920-1192, Japan – sequence: 5 givenname: Yoshihiko surname: Uesugi fullname: Uesugi, Yoshihiko organization: Kanazawa University Research Center for Sustainable Energy and Technology, Kanazawa 920-1192, Japan – sequence: 6 givenname: Tatsuo surname: Ishijima fullname: Ishijima, Tatsuo organization: Kanazawa University Research Center for Sustainable Energy and Technology, Kanazawa 920-1192, Japan |
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SubjectTerms | Materials processing Molecular gases Quartz Radicals Substrates Thermal plasmas Tubes Variability |
Title | Fundamentals of planar-type inductively coupled thermal plasmas on a substrate for large-area material processing |
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