The local generation and recombination lifetime based on forward diode characteristics diagnostics

• Published in: Journal of crystal growth Vol. 362; pp. 300 - 303
• Main Authors: Pengchan, Weera, Phetchakul, Toempong, Poyai, Amporn
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-01-2013; Elsevier
• Subjects: A1. Activation energy; A1. Characterization; A1. Defect; Activation energy; Applied sciences; B2. Semiconducting silicon; Carriers; CMOS; Crystal defects; Current carriers; Diodes; Electronics; Exact sciences and technology; Materials; Mathematical analysis; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; A1. Activation energy; A1. Characterization; A1. Defect; B2. Semiconducting silicon; Semiconductor materials; Voltage current curve; Diode; p n junction; Lifetime; Complementary MOS technology; Charge carrier generation; Silicon; Activation energy; Nanomaterial synthesis; Voltage capacity curve
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.11.087

This paper is proposed to extract the local carrier generation and recombination lifetime from forward characteristics of diode. The different geometry p–n junctions have been fabricated by a standard CMOS technology. Among a variety process steps, implantation step may generate defects. Therefore, the local implantation-induced defects have been studied from the defect activation energy, which has been obtained from the ratio of the local carrier generation and recombination lifetime. The forward current–voltage (I–V) and high frequency capacitance–voltage (C–V) characteristics of p–n junctions have been measured in order to obtain the local carrier generation and recombination lifetime. The calculated activation energy from this method gave reasonable values comparing with the ones obtained from the Arrhenius plot of the reverse current.
► Novel method to extract the local carrier generation and recombination lifetime from forward characteristics of diode. ► Leakage current relates to the defects in the depletion region of p–n junction. ► Implantation step generate defects. ► The electrically active defects have been studied from the activation energy by analyzing the carrier lifetime.