Growth and characterisation of Ga(NAsBi) alloy by metal–organic vapour phase epitaxy

• Published in: Journal of crystal growth Vol. 396; pp. 79 - 84
• Main Authors: Bushell, Z.L., Ludewig, P., Knaub, N., Batool, Z., Hild, K., Stolz, W., Sweeney, S.J., Volz, K.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-06-2014; Elsevier
• Subjects: A3. Metal–organic vapour phase epitaxy; Atomic force microscopy; B1. Bismuth compounds; B1. GaNAsBi; B1. Nitrides; B2. Semiconducting III–V materials; B2. Semiconducting quaternary alloys; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Diffraction; Epitaxy; Exact sciences and technology; Gallium arsenide; Gallium arsenides; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of bulk materials and thin films; Physics; Scanning transmission electron microscopy; Secondary ion mass spectrometry; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Vapor phase epitaxy; growth from vapor phase; Vapour; B1. Bismuth compounds; A3. Metal–organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B1. GaNAsBi; B2. Semiconducting quaternary alloys; Quaternary alloys; Atomic force microscopy; Gallium arsenides; Photoreflectance; A3. Metal-organic vapour phase epitaxy; VPE; XRD; Precursor; Organic hydrazine; B2. Semiconducting III-V materials; Nitrides; Energy gap; Optical properties; Scanning transmission electron microscopy; Electronic properties; Epitaxial layers; Multiple quantum well; Secondary ion mass spectrometry; III-V compound; MOVPE method; Growth mechanism; Bismuth compounds; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2014.03.038

This paper summarises results of the epitaxial growth of Ga(NAsBi) by metal–organic vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations of the samples. Ga(NAsBi)/GaAs multi-quantum well (MQW) samples are grown at 400°C and single layers at 450°C on GaAs (001) substrates. Triethylgallium (TEGa), tertiarybutylarsine (TBAs), trimethylbismuth (TMBi) and unsymmetrical dimethylhydrazine (UDMHy) are used as precursors. Secondary ion mass spectrometry (SIMS) shows that the Bi content is independent of the N content in the alloy. It is found that the N content depends on both UDMHy and TMBi supply during growth. High resolution X-ray diffraction (HR-XRD), scanning transmission electron microscopy (STEM) and atomic force microscopy (AFM) measurements show that samples with good crystalline quality can be realised. For samples containing 1.8% Bi and up to 1.8% N grown at 450°C, photoreflectance spectroscopy (PR) shows a decrease in the band gap with increasing N content of 141±22meV/% N.
•GaNAsBi MQWs and single layers grown by metal–organic vapour phase epitaxy.•Linear relationship between N content and UDMHy supply, Bi content independent of N.•Good chemical homogeneity and relatively sharp heterointerfaces can be achieved.•Photoreflectance spectroscopy shows reduction of band gap by 141±22meV/% N.