Hillock sizes after wet etching in silicon

The formation of two- and three-dimensional hillocks is regularly observed in Si(1 1 1) steps and Si(1 0 0) during wet etching. Frequently the resulting morphology consists of hillocks scattered on a landscape of limited roughness. Recently we proposed a mean field model (MFM) in which the observed...

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Bibliographic Details
Published in:	Surface science Vol. 603; no. 23; pp. 3346 - 3349
Main Authors:	Mirabella, D.A., Suárez, M.P., Aldao, C.M.
Format:	Journal Article
Language:	English
Published:	Kidlington Elsevier B.V 01-12-2009 Elsevier
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Etching Exact sciences and technology Landscapes Mathematical models Monte Carlo simulations Morphology Physics Roughness and topography Silicon Size distribution Steady state Surface structure Valleys Etching Monte Carlo simulations Roughness and topography Morphology Surface structure Two-dimensional systems Digital simulation Three-dimensional systems Roughness Step Surface topography Steady state Magnetic force microscopy Mean-field theory Monte Carlo methods Silicon
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