Single-Nanosecond-Pulse Lasing in Heavily Doped Fe:ZnSe
We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr 3+ :Yb 3+ :Ho 3+ :YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated wi...
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Published in: | IEEE photonics journal Vol. 13; no. 1; pp. 1 - 7 |
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Main Authors: | , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Piscataway
IEEE
01-02-2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects: | |
Online Access: | Get full text |
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Summary: | We investigated room-temperature pulsed lasing in heavily doped Fe:ZnSe single crystals. The active elements were pumped by a Q-switched Cr 3+ :Yb 3+ :Ho 3+ :YSGG laser operating at 2.87 μm. Our results show that the generation of short laser pulses has a deep high-frequency modulation associated with relaxation dynamics in Fe:ZnSe. The lasing regime obtained in this study provides a straightforward way to generate mid-IR single nanosecond pulses at moderate pump energies. Moreover, we found a relation between the lasing pulse duration and the concentration of Fe 2+ doping ions, and we experimentally demonstrated pulse shortening in heavily doped active crystals. Single-pulse lasing with an FWHM pulse duration of ~2.8 ns was achieved in ZnSe crystals doped with 2.3 · 10 19 cm -3 Fe 2+ ions. The demonstrated single-pulse lasing regime is applicable for seeding high-power mid-IR laser systems. |
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ISSN: | 1943-0655 1943-0647 |
DOI: | 10.1109/JPHOT.2020.3046363 |