Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D analysis includes the calculation of the crystallization front geometry, validated by comparing to experimental data and results obtained wit...

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Bibliographic Details
Published in:	Journal of crystal growth Vol. 250; no. 1; pp. 203 - 208
Main Authors:	Kalaev, V.V., Lukanin, D.P., Zabelin, V.A., Makarov, Yu.N., Virbulis, J., Dornberger, E., Ammon, W.von
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-03-2003
Subjects:	A1. Computer simulation A1. Heat transfer A1. Turbulent convection A2. Czochralski method B1. Silicon A1. Heat transfer A1. Turbulent convection 47.27.Te B1. Silicon 83.20.Jp 47.27.Eq 81.10.Aj A1. Computer simulation A2. Czochralski method 81.10.Fq
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Summary:	We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during 300 mm CZ Si crystal growth. The 3D analysis includes the calculation of the crystallization front geometry, validated by comparing to experimental data and results obtained with a conventional 2D model. At the second step, an analysis of defect incorporation and evolution in the crystal has been performed within a 2D model.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0022-0248 1873-5002
DOI:	10.1016/S0022-0248(02)02240-6