In-situ luminescence measurement for AlN ceramics under reactor irradiation

• Published in: Radiation effects and defects in solids Vol. 147; no. 4; pp. 283 - 292
• Main Authors: Hu, Q., Tanaka, S., Yoneoka, T., Grismanovs, V.
• Format: Journal Article
• Language: English
• Published: Reading Taylor & Francis Group 01-04-1999; Taylor and Francis
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; In-situ luminescence; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other solid inorganic materials; Oxygen-related defect complexes; Photoluminescence; Physics; Radiation defect; Reactor irradiation; Inorganic compounds; Gamma radiation; Physical radiation effects; Aluminium nitrides; Photoluminescence; Ceramics; Experimental study; Defects; Thermoluminescence
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420159908226996

The behavior of luminescence emission of AlN ceramics under reactor and gamma irradiation has been studied with in-situ luminescence and thermoluminescence methods. A broad emission peak (around 370 nm), which had a different position for AlN samples with different oxygen concentration, was found. The intensity of luminescence emission has close relations with reactor power (fast neutron flux) and temperature. Influence on emission behavior from radiation defects (vacancies and interstitials) and intrinsic defects (oxygen-related defect complexes) was discussed.