Dry etching of all-oxide transparent thin film memory transistors
Transparent ferroelectric field-effect transistors of oxidic thin films have been fabricated, showing a memory effect with an on/off ratio of the channel conductance of more than three orders of magnitude. The devices consist of a 10 nm n-type SnO2:Sb semiconductor channel with a 10 nm BaZrO3 cappin...
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| Published in: | Microelectronic engineering Vol. 35; no. 1-4; pp. 71 - 74 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier B.V
01-02-1997
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| Abstract | Transparent ferroelectric field-effect transistors of oxidic thin films have been fabricated, showing a memory effect with an on/off ratio of the channel conductance of more than three orders of magnitude. The devices consist of a 10 nm n-type SnO2:Sb semiconductor channel with a 10 nm BaZrO3 capping layer, In2O3:Sn contact pads, a 250 nm PbZr0.2Ti0.8O3 layer as a ferroelectric insulator, and conducting SrRuO3 as gate electrode. After deposition, the layers were structured by means of reactive ion etching. All materials were structured with a lithographically defined mask in a CHF3Ar plasma. Etching with CHF3Ar does not produce any volatile etch products but contrary to pure Ar sputter etching, no redeposited materials were found on the structures. |
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| AbstractList | Transparent ferroelectric field-effect transistors of oxidic thin films have been fabricated, showing a memory effect with an on/off ratio of the channel conductance of more than three orders of magnitude. The devices consist of a 10 nm n-type SnO sub(2):Sb semiconductor channel with a 10 nm BaZrO sub(3) capping layer, In sub(2)O sub(3):Sn contact pads, a 250 nm PbZr sub(0.2)Ti sub(0.8)O sub(3) layer as a ferroelectric insulator, and conducting SrRuO sub(3) as gate electrode. After deposition, the layers were structured by means of reactive ion etching. All materials were structured with a lithographically defined mask in a CHF sub(3)/Ar plasma. Etching with CHF sub(3)/Ar does not produce any volatile etch products but contrary to pure Ar sputter etching, no redeposited materials were found on the structures. Transparent ferroelectric field-effect transistors of oxidic thin films have been fabricated, showing a memory effect with an on/off ratio of the channel conductance of more than three orders of magnitude. The devices consist of a 10 nm n-type SnO2:Sb semiconductor channel with a 10 nm BaZrO3 capping layer, In2O3:Sn contact pads, a 250 nm PbZr0.2Ti0.8O3 layer as a ferroelectric insulator, and conducting SrRuO3 as gate electrode. After deposition, the layers were structured by means of reactive ion etching. All materials were structured with a lithographically defined mask in a CHF3Ar plasma. Etching with CHF3Ar does not produce any volatile etch products but contrary to pure Ar sputter etching, no redeposited materials were found on the structures. |
| Author | Cillessen, J.F.M. Prins, M.W.J. van Esch, H.A. Giesbers, J.B. |
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| CitedBy_id | crossref_primary_10_1016_j_snb_2018_04_087 crossref_primary_10_7567_APEX_9_041101 crossref_primary_10_7567_1347_4065_ab2195 crossref_primary_10_1557_JMR_2000_0001 crossref_primary_10_1063_1_370609 crossref_primary_10_1088_0960_1317_20_5_055008 |
| Cites_doi | 10.1016/0167-9317(95)00113-1 10.1016/0169-4332(95)00548-X 10.1016/0167-9317(93)90129-S 10.1063/1.115759 10.1016/0022-3115(93)90310-U |
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| References | Larsen, Spierings, Cuppens, Dormans (BIB2) 1993; 22 Cillessen, Wolf, Giesbers, Blom, Grosse-Holz, Pastoor (BIB3) 1996; 96-98 van Delft, Giesbers, Haag (BIB4) 1992; 200 Mace, Achard, Peccoud (BIB6) 1995; 19 Prins, Grosse-Holz, Müller, Cillessen, Giesbers, Weening, Wolf (BIB1) 1996; 68 van Delft (BIB5) 1996; 30 Prins (10.1016/S0167-9317(96)00152-9_BIB1) 1996; 68 Larsen (10.1016/S0167-9317(96)00152-9_BIB2) 1993; 22 Cillessen (10.1016/S0167-9317(96)00152-9_BIB3) 1996; 96-98 Haag (10.1016/S0167-9317(96)00152-9_BIB4_2) 1993; 200 van Delft (10.1016/S0167-9317(96)00152-9_BIB5) 1996; 30 Mace (10.1016/S0167-9317(96)00152-9_BIB6) 1995; 19 van Delft (10.1016/S0167-9317(96)00152-9_BIB4_1) 1992 |
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| Title | Dry etching of all-oxide transparent thin film memory transistors |
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