Atomic configuration study of implanted F in Si based on experimental evidences and ab initio calculations

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 91; pp. 148 - 151
• Main Authors: Hirose, T., Shano, T., Kim, R., Tsuji, H., Kamakura, Y., Taniguchi, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30-04-2002; Elsevier
• Subjects: Boron; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Diffusion; Doping and impurity implantation; Doping and impurity implantation in germanium and silicon; Exact sciences and technology; Ion implantation; Physics; Secondary ion mass spectrometry; Silicon; Structure of solids and liquids; crystallography; Secondary ion mass spectrometry; Ion implantation; Boron; Silicon; Diffusion; Doping and impurity implantation; Vacancies; Semiconductor materials; Ab initio method; Doping; Fluorine additions; Theoretical study; Experimental study; Rapid thermal annealing; Nonmetals; Crystal defect interaction; Boron additions; SIMS; Kinetics
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(01)00973-4

The effects of F on B diffusion and activation in Si were investigated through experiments and ab initio calculations. It was found that F atoms captured by vacancy type defects originating from ion implantation form two stable F–V configurations, while the F atoms remaining in Si affect B activation by forming stable F–B complex. During the initial stage of annealing, B diffusion in highly F-doped regions is suppressed significantly due to the recombination of generated self-interstitials with F atoms, resulting in a decrease in self-interstitial concentration.