Generalized mobility law for drain current modeling in Si MOS transistors from liquid helium to room temperatures

• Published in: IEEE transactions on electron devices Vol. 40; no. 3; pp. 564 - 569
• Main Authors: Emrani, A., Balestra, F., Ghibaudo, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-03-1993; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Attenuation; Capacitance; Cryogenics; Electronics; Exact sciences and technology; Helium; MOSFET circuits; Parameter extraction; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Temperature distribution; Threshold voltage; Transconductance; Transistors; Transistor parameter; Field effect transistor; Temperature effect; Mobility; Silicon; MOS transistor; Power law; Modeling; Electrical characteristic; Linearization
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.199361

A generalized mobility law for drain current modeling in Si MOSFETs operated in the linear region which is valid between room and liquid helium temperatures, is presented. It is based on the existence of a power-law parameter that is a unique value of n for each temperature and that allows the linearization of an appropriate function of gate voltage at sufficiently strong inversion, depending on the drain current and the transconductance of the device. It is demonstrated that a unique value of n can be found for each temperature with a very high precision. This model has been successfully applied to a number of n- and p-channel MOS transistors, and can be used to obtain an accurate extraction of the main device parameters and, therefore, a precise modeling of the transfer characteristics in the whole range of temperature for strong inversion operation.< >