A 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT)

• Published in: IEEE electron device letters Vol. 16; no. 6; pp. 283 - 285
• Main Authors: Parthasarathy, V., Bhalla, A., Chow, T.P.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-06-1995; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Cathodes; Current density; Electric resistance; Electronics; Electrons; Exact sciences and technology; Implants; Insulated gate bipolar transistors; Modeling; MOSFET circuits; Numerical simulation; Other multijunction devices. Power transistors. Thyristors; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thyristors; Voltage current curve; Cross section; Insulated gate bipolar transistor; Theoretical study; Gate turn off thyristor; Operation study; Control; Experimental result; Numerical simulation; P type conductivity; Structure; Current density; Resistor; Production process
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/55.790736

In this paper we report a 550 V Isolated Channel Base Resistance Controlled Thyristor (ICBRT), which incorporates a heavily doped p-type diffusion at the edges of the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in this new device along with separate turn-on and turn-off regions. A 70% improvement in the maximum controllable current density during resistive turn-off over the conventional BRT has been demonstrated in numerical simulations and experimental measurements.