Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 51; no. 1; pp. 229 - 232
• Main Authors: Nakashima, Hisao, Kato, Takehiko, Maehashi, Kenzo, Nishida, Takehiro, Inoue, Yoshiji, Takeuchi, Toshikazu, Inoue, Koichi, Fischer, Peter, Christen, Jürgen, Grundmann, Marius, Bimberg, Dieter
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 27-02-1998; Elsevier
• Subjects: Cathodoluminescence; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; GaAs quantum wire; Growth interruption; Iii-v semiconductors; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Photoluminescence; Physics; Vicinal surface; Molecular beam epitaxy; Vicinal surface; Cathodoluminescence; Growth interruption; Photoluminescence; GaAs quantum wire; Spectral shift; Quantum wires; Confinement; Gallium arsenides; Images; Growth mechanism; Experimental study; Interrupts
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(97)00266-3

GaAs quantum wires are naturally formed by MBE on vicinal GaAs(110) surfaces with coherently aligned giant growth steps due to thickness modulation at step edges. Two-step growth with growth interruption is employed to improve uniformity and confinement energies of quantum wires, which are confirmed by photo and cathodoluminescence measurements.