Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process

• Published in: Journal of luminescence Vol. 82; no. 1; pp. 81 - 84
• Main Authors: Chine, Z, Piriou, B, Oueslati, M, Boufaden, T, El Jani, B
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-07-1999; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; GaN; High-excitation density; Iii-v semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Two-photon process; Yellow band; GaN; Two-photon process; Yellow band; High-excitation density; Time resolution; Semiconductor materials; Gallium nitrides; Excitation intensity; Photoluminescence; Two-photon processes; Experimental study; Antistokes lines
• ISSN: 0022-2313; 1872-7883
• DOI: 10.1016/S0022-2313(99)00014-9

Time-dependent photoluminescence of yellow band in GaN has been investigated under various excitation conditions using a
Q-switched Nd
:
YAG laser as an excitation source. An anti-Stokes photoluminescence of the yellow band that dominates the photoluminescence (PL) spectra has been observed under the below band-gap excitation. The intensity of the anti-Stokes PL shows a non-linear dependence on the excitation intensity. Our results suggest that the energy up-conversion is via a two-step two-photon absorption process.