Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor

We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migr...

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Published in:	Japanese Journal of Applied Physics Vol. 56; no. 10; pp. 108001 - 108003
Main Authors:	Lee, Yeol-Hyeong, Cho, Yong-Jung, Kim, Woo-Sic, Park, Jeong Ki, Kim, Geon Tae, Kim, Ohyun
Format:	Journal Article
Language:	English
Published:	Tokyo The Japan Society of Applied Physics 01-10-2017 Japanese Journal of Applied Physics
Subjects:	Bias Degradation Hydrogen ions Illumination Ionization Migration Molecular chains Protective coatings Semiconductor devices Thin film transistors Threshold voltage Vacancies Water chemistry
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Abstract	We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migration of hydrogen ions among oxygen vacancies. Under illumination, the soaking time tS did not affect the threshold voltage shift ΔVth. We consider that this independence occurred because illumination caused ionization from the oxygen vacancy VO state to VO2+, which impeded hydrogen migration induced by electric field and thereby protected the device from degradation after exposure to water.
AbstractList	We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migration of hydrogen ions among oxygen vacancies. Under illumination, the soaking time t S did not affect the threshold voltage shift ΔV th. We consider that this independence occurred because illumination caused ionization from the oxygen vacancy VO state to VO 2+, which impeded hydrogen migration induced by electric field and thereby protected the device from degradation after exposure to water. We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS). Degradation was caused by molecules that were absorbed or diffused from the outside. We suggest that degradation under NBTS is caused by the migration of hydrogen ions among oxygen vacancies. Under illumination, the soaking time tS did not affect the threshold voltage shift ΔVth. We consider that this independence occurred because illumination caused ionization from the oxygen vacancy VO state to VO2+, which impeded hydrogen migration induced by electric field and thereby protected the device from degradation after exposure to water.
Author	Park, Jeong Ki Cho, Yong-Jung Kim, Ohyun Kim, Woo-Sic Kim, Geon Tae Lee, Yeol-Hyeong
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Cites_doi	10.1002/pssa.201600503 10.1109/TED.2012.2208971 10.1149/2.0021701jss 10.1038/nature03090 10.1109/LED.2008.2006637 10.1109/JDT.2016.2590566 10.1149/2.011301jss 10.1109/TED.2015.2392763 10.1063/1.3020714 10.1063/1.4792229
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References	11 1 2 Kim H. J. (7) 2013; 46 3 4 5 6 8 9 10
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Snippet	We explained how H2O degrades amorphous-InGaZnO thin-film transistors. H2O caused serious degradation only during negative bias temperature stress (NBTS)....
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SubjectTerms	Bias Degradation Hydrogen ions Illumination Ionization Migration Molecular chains Protective coatings Semiconductor devices Thin film transistors Threshold voltage Vacancies Water chemistry
Title	Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor
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