Nanostructure of ZnO thin films prepared by reactive rf magnetron sputtering

• Published in: Thin solid films Vol. 318; no. 1; pp. 117 - 119
• Main Authors: Takai, O., Futsuhara, M., Shimizu, G., Lungu, C.P., Nozue, J.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15-04-1998; Elsevier Science
• Subjects: Clusters, nanoparticles, and nanocrystalline materials; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microstructure; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals; Nanostructure; Physics; Structure of solids and liquids; crystallography; ZnO film; Microstructure; ZnO film; Nanostructure; Inorganic compounds; Crystal orientation; Transition element compounds; Binary compounds; Crystal growth from vapors; Nanostructures; Experimental study; Preferred orientation; Plasma chemistry; Gas mixtures; Thin films; Magnetrons; Zinc oxides; Reactive sputtering; Mixing ratio
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)01148-6

Structure of the ZnO thin films prepared by reactive rf magnetron sputtering is studied concerning sputtering gas composition by using X-ray diffraction (XRD). Ar–O
2 and Ar–He–O
2 mixtures are used as sputtering gases. XRD analysis reveals that Ar affects to the crystal orientation and microstructure of the ZnO films. The addition of He is very effective to activate O
2 molecules and a single phase ZnO film is formed at extremely low O
2 concentration of 5% in the sputtering gas. The sputtering gas composition is an important experimental condition to determine the structural properties of the ZnO thin films. Plasma states monitored by an optical emission spectroscopic system are related to the change in the structural properties of the ZnO films.