Near-surface lateral vacancy migration in O +-implanted SiC studied by positron re-emission microscopy

The areal distribution of near-surface defects created by the implantation of O + ions into 6H–SiC through chemically-deposited masks has been studied by reflection-geometry positron re-emission microscopy (PRM). PRM images were obtained for ion doses of 1×10 13 and 1×10 14 cm −2. The ratios of re-e...

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Bibliographic Details
Published in:	Applied surface science Vol. 149; no. 1; pp. 135 - 139
Main Authors:	Burrows, C.P, Knights, A.P, Coleman, P.G
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Amsterdam Elsevier B.V 01-08-1999 Elsevier Science
Subjects:	Composition; defects and impurities Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals; microstructure Exact sciences and technology Microscopy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physics Point defects (vacancies, interstitials, color centers, etc.) and defect clusters Positron Positron annihilation Silicon carbide Solid surfaces and solid-solid interfaces Structure of solids and liquids; crystallography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Vacancies 79.20.Mb PLM 07.78.+s 61.72.Ji Vacancies Silicon carbide IL Microscopy SG OE 78.70.Bj Positron Ion implantation Inorganic compounds Semiconductor materials Surface defect Migration Positrons Silicon carbides Experimental study
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