Electrical characterization of directly deposited La-Sc oxides complex for gate insulator application

• Published in: Microelectronic engineering Vol. 84; no. 9; pp. 2235 - 2238
• Main Authors: Kawanago, T., Tachi, K., Song, J., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., Iwai, H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-09-2007; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; High-k; MOSFET; Rare earth oxides; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; V fb shift; MOSFET; High-k; V fb shift; Rare earth oxides; High density; Transistor gate; Multiple layer; Annealing temperature; rare earth oxides; Vfb shift; Gate oxide; High k dielectric; NMOS technology; Voltage capacity curve; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2007.04.115

This study reports the electrical characteristics of La-Sc oxides complex and effect of nitrogen incorporation for applications to high-k gate stack. We found that V
fb can be controlled by the ScO concentration. Moreover, large bumps in C-V curves, which indicate high interfacial state density, can be suppressed with large ScO concentration. nMOSFETs using the La-Sc oxides complex in the gate stack are fabricated. In addition, nitrogen incorporation into the La-Sc oxide films was fond to be useful to suppress the EOT growth during annealing at high temperatures.