The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy

• Published in: Journal of crystal growth Vol. 220; no. 4; pp. 457 - 460
• Main Authors: Gao, F, Huang, D.D, Li, J.P, Lin, Y.X, Kong, M.Y, Li, J.M, Zeng, Y.P, Lin, L.Y
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01-12-2000; Elsevier
• Subjects: Applied sciences; Cross-disciplinary physics: materials science; rheology; Current gain; Deposition technology; Doping; Electronics; Exact sciences and technology; GSMBE; HBT; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Molecular, atomic, ion, and chemical beam epitaxy; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SiGe alloy; SIMS; 85.30.Pq; SiGe alloy; Doping; SIMS; 81.15.Hi; 68.55.Ln; 82.80.Ms; GSMBE; HBT; Current gain; Semiconductor materials; Impurity density; Crystal growth from vapors; Phosphorus additions; Experimental study; Fabrication property relation; Crystal doping; Double heterojunction; Thin films; Thickness; Binary alloys; Rapid thermal annealing; Microelectronic fabrication; Germanium alloys; Silicon alloys; Nonmetals; Molecular beam epitaxy; Boron additions; GSMBE method; Silicon; Heterojunction bipolar transistors; Electrical characteristic
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(00)00857-5

Three n–p–n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH
3) and diborane (B
2H
6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300
K and 62 at 77
K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed.