Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces

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Bibliographic Details
Published in:	Physical review letters Vol. 71; no. 14; pp. 2280 - 2283
Main Authors:	HINES, M. A, CHABAL, Y. J, HARRIS, T. D, HARRIS, A. L
Format:	Journal Article
Language:	English
Published:	Ridge, NY American Physical Society 04-10-1993
Subjects:	Atomic and molecular physics Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Molecular properties and interactions with photons Molecular spectra Physics Raman and rayleigh spectra (including optical scattering) Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surface structure and topography Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Oscillation modes Raman spectra Stress relaxation Semiconductor materials Angular resolution Hydrogen bonds Dynamics Nonmetals Polarized beams Silicon Step Experimental study
Online Access:	Get full text
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Description
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0031-9007 1079-7114
DOI:	10.1103/physrevlett.71.2280