Conjugated Polymer with On-Chain Pt(II) Complex for Resistive Random-Access Memory Device

• Published in: Macromolecular chemistry and physics Vol. 213; no. 23; pp. 2472 - 2478
• Main Authors: Lin, Wenpeng, Sun, Huibin, Liu, Shujuan, Yang, Huiran, Ye, Shanghui, Xu, Wenjuan, Zhao, Qiang, Liu, Xiangmei, Huang, Wei
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 13-12-2012; WILEY‐VCH Verlag; Wiley
• Subjects: Applied sciences; charge transfer; Compound structure devices; conjugated polymer; Electronics; Exact sciences and technology; Inorganic and organomineral polymers; Physicochemistry of polymers; platinum complex; polymer memory; Preparation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Memory devices; Voltage current curve; Phenylenevinylene derivative copolymer; Random access memory; Quinoline derivative copolymer; Lateral group; Mechanism; charge transfer; platinum complex; ITO layers; Platinum II Complexes; Solution polycondensation; polymer memory; Carbazole derivative copolymer; Organometallic copolymer; Experimental study; Bistability; Suzuki coupling; Electrochemical properties; Conjugated copolymer; Preparation; Copolycondensation; Current time characteristic; Memory effect; Fluorene derivative copolymer; conjugated polymer
• ISSN: 1022-1352; 1521-3935
• DOI: 10.1002/macp.201200465

A novel conjugated polymer, containing carbazole which acted as an electron‐donor moiety, and a Pt(II) complex which acted as an electron‐acceptor moiety, was synthesized and characterized. Electrical characterizations for the sandwiched polymer memory device (ITO/polymer/Al) indicate that the polymer possesses electrical bistability and the device exhibits resistive random‐access memory. The memory mechanism has been investigated through theoretical calculations and attributed to the formation and dissociation of a charge‐transfer state under the applied voltage. The device exhibits excellent memory performances, such as low threshold voltage, high ON/OFF current ratio, and good stability.
A novel conjugated polymer containing Pt(II) complex on the main chain acts as an active layer in the sandwich structure of an Al/polymer/ITO device, which achieves resistive random‐access memory with a low threshold voltage, excellent stability, and a high ON/OFF current ratio. The memory mechanism of the device has been investigated and assigned to the formation and dissociation of a charge‐transfer state under the applied voltage.