Advanced germanium layer transfer for ultra thin body on insulator structure

Advanced germanium layer transfer for ultra thin body on insulator structure

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ∼1 nm, observing a strong Raman intensity enhancement for h...

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Bibliographic Details
Published in:Applied physics letters Vol. 109; no. 26
Main Authors: Maeda, Tatsuro, Chang, Wen-Hsin, Irisawa, Toshifumi, Ishii, Hiroyuki, Hattori, Hiroyuki, Poborchii, Vladimir, Kurashima, Yuuichi, Takagi, Hideki, Uchida, Noriyuki
Format: Journal Article
Language:English
Published: Melville American Institute of Physics 26-12-2016
Subjects:
Applied physics
Germanium
MOSFETs
Raman spectroscopy
Size effects
Substrates
Thin films
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Summary:We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ∼1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4973405