The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, the formation mechanism of voids and its effect on crystal quality are investigated. Based on microstructural analysis and first principles calculations, it is confirmed that (...

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Bibliographic Details

Published in:	Applied physics letters Vol. 116; no. 25
Main Authors:	Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lü, Wei, Li, Dabing
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 22-06-2020
Subjects:	Aluminum nitride Annealing Applied physics First principles High temperature Microstructural analysis Physical vapor deposition Threading dislocations Voids
Online Access:	Get full text
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