HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the laser radiation used to evaporate source materials was found to be a very important growth parameter. The superlattice structures have been cha...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 4; no. 4; pp. 2086 - 2090
Main Authors: Cheung, J. T., Niizawa, G., Moyle, J., Ong, N. P., Paine, B. M., Vreeland, T.
Format: Journal Article
Language:English
Published: 01-07-1986
Subjects:
LASER RADIATION
ELECTRICAL PROPERTIES
CRYSTAL STRUCTURE
EPITAXIAL LAYERS
CdTe
(Hg,Cd)Te
MERCURY TELLURIDES
ELECTRON MOBILITY
HgTe
MOLECULAR BEAM EPITAXY
SUPERLATTICES
CHARGED−PARTICLE TRANSPORT
FABRICATION
HALL EFFECT
CADMIUM TELLURIDES
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Summary:CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the laser radiation used to evaporate source materials was found to be a very important growth parameter. The superlattice structures have been characterized by helium ion backscattering spectrometry, x‐ray double crystal diffractometry, and low temperature electrical transport measurements. Results indicate good crystallinity and very strong 2D carrier confinement at low temperatures. At 77 K, electron mobilities in excess of 50 000 cm2/V s have been observed. Quantum Hall effect has been observed for the first time in this system.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.574032