Biexciton creation and recombination of a GaAs quantum well

Biexciton creation and recombination of a GaAs quantum well

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Bibliographic Details
Published in:Physical review. B, Condensed matter Vol. 45; no. 8; pp. 4308 - 4311
Main Authors: PHILLIPS, R. T, LOVERING, D. J, DENTON, G. J, SMITH, G. W
Format: Journal Article
Language:English
Published: Woodbury, NY American Physical Society 15-02-1992
American Institute of Physics
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Quantum well
Semiconductor materials
Envelope function
Photoluminescence
Aluminium Gallium Arsenides Mixed
Theoretical study
Biexciton
Experimental study
Inorganic compound
Gallium Arsenides
Charge carrier recombination
Excitation spectrum
Excited state
Symmetry
Online Access:Get full text
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Description
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0163-1829
1095-3795
DOI:10.1103/physrevb.45.4308