A three-dimensional photonic crystal operating at infrared wavelengths

• Published in: Nature (London) Vol. 394; no. 6690; pp. 251 - 253
• Main Authors: Lin, S. Y, Fleming, J. G, Hetherington, D. L, Smith, B. K, Biswas, R, Ho, K. M, Sigalas, M. M, Zubrzycki, W, Kurtz, S. R, Bur, Jim
• Format: Journal Article
• Language: English
• Published: London Nature Publishing 16-07-1998; Nature Publishing Group
• Subjects: Crystals; Exact sciences and technology; Fundamental areas of phenomenology (including applications); Light; Optical materials; Optics; Photonic bandgap materials; Physics; Wavelengths; Semiconductor materials; Three dimensional structure; Photonic crystal; Infrared radiation; Optical materials; Silicon; Experimental study
• ISSN: 0028-0836; 1476-4687
• DOI: 10.1038/28343

The ability to confine and control light in three dimensions would have important implications for quantum optics and quantum-optical devices: the modification of black-body radiation, the localization of light to a fraction of a cubic wavelength, and thus the realization of single-mode light-emitting diodes, are but a few examples. Photonic crystals - the optical analogues of electronic crystal - provide a means for achieving these goals. Combinations of metallic and dielectric materials can be used to obtain the required three-dimensional periodic variations in dielectric constant, but dissipation due to free carrier absorption will limit application of such structures at the technologically useful infrared wavelengths. On the other hand, three-dimensional photonic crystals fabricated in low-loss gallium arsenide show only a weak 'stop band' (that is, range of frequencies at which propagation of light is forbidden) at the wavelengths of interest. Here we report the construction of a three-dimensional infrared photonic crystal on a silicon wafer using relatively standard microelectronics fabrication technology. Our crystal shows a large stop band (10-14.5 μm), strong attenuation of light within this band (∼12 dB per unit cell) and a spectral response uniform to better than 1 per cent over the area of the 6-inch wafer.