Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz Applications

• Published in: IEEE transactions on microwave theory and techniques Vol. 58; no. 7; pp. 1933 - 1942
• Main Authors: Siles, J V, Grajal, J
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-07-2010; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Circuit simulation; Computational modeling; Computer simulation; Design automation; Design optimization; Devices; Frequency; Frequency multipliers; harmonic balance; local oscillator (LO) sources; Local oscillators; Mathematical models; Multipliers; Numerical models; Power generation; Power system harmonics; Schottky diode modeling; Schottky diodes; Terahertz frequencies; terahertz technology
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2010.2050103

Planar Schottky diode frequency multipliers are by far the most employed devices for local oscillator (LO) power generation at terahertz frequencies. In order to push up to the limit the available LO power at terahertz frequencies, the use of accurate physics-based simulation tools is highly necessary to develop multiplier circuits with the highest performance. This paper investigates the potential capabilities of Schottky multipliers for LO power generation up to 2.4 THz by means of an in-house computer-aided design tool that combines harmonic balance techniques with an accurate physics-based numerical model of the semiconductor device. According to numerical simulation results, a 32-μW LO power could be theoretically achieved with a 2.4-THz LO chain at room temperature from a 150-mW W-band solid-state LO source. This demonstrates that there is still a broad margin for the improvement of state-of-the-art terahertz LO power sources.