Copper-silicon carbide composite plating for inhibiting the extrusion of through silicon via (TSV)

For 3D packaging using TSV technology, it is required various techniques such as forming via holes on a wafer, filling conductive materials and interpretation of TSV reliability etc. Among them, solving the issue of reliability are standing out as a big problem for reaching commercialization in the...

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Bibliographic Details
Published in:	Microelectronic engineering Vol. 214; pp. 5 - 14
Main Authors:	Kee, Se-Ho, Kim, Won-Joong, Jung, Jae-Pil
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-06-2019 Elsevier BV
Subjects:	3-D technology Commercialization Composite plating Copper Copper plating Electronic packaging Electroplating Extreme values Extrusion High temperature Integrated circuits Interconnections Packaging Plating Reliability Silicon Silicon carbide Silicon wafers Thermal expansion Thermal expansion coefficient Through-silicon-via Packaging Composite plating Thermal expansion coefficient Extrusion Silicon carbide Through-silicon-via
Online Access:	Get full text
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