Lifetime broadening in GaAs-AlGaAs quantum well lasers

Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and dev...

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Bibliographic Details
Published in:	IEEE journal of quantum electronics Vol. 26; no. 3; pp. 443 - 448
Main Authors:	Kucharska, A.I., Robbins, D.J.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-03-1990 Institute of Electrical and Electronics Engineers
Subjects:	640304 > Atomic, Molecular & Chemical Physics > Collision Phenomena 657002 > Theoretical & Mathematical Physics > Classical & Quantum Mechanics ALUMINIUM ARSENIDES ALUMINIUM COMPOUNDS AMPLIFICATION ARSENIC COMPOUNDS ARSENIDES ATOMIC AND MOLECULAR PHYSICS CARRIER DENSITY Charge carrier density CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COLLISIONS Density measurement EFFICIENCY ELECTRON COLLISIONS ELECTRON-ELECTRON COLLISIONS EMISSION SPECTRA ENGINEERING Exact sciences and technology Fundamental areas of phenomenology (including applications) GAIN Gain measurement GALLIUM ARSENIDES GALLIUM COMPOUNDS Laboratories Laser modes LASERS LINE BROADENING Optics Particle scattering Physics PNICTIDES QUANTUM EFFICIENCY Quantum well lasers SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS Semiconductor lasers; laser diodes SOLID STATE LASERS SPECTRA 426002 > Engineering > Lasers & Masers > (1990-) Spontaneous emission Threshold current TWO-DIMENSIONAL CALCULATIONS Gallium Arsenides Quantum well Electron scattering Lifetime Spontaneous emission Aluminium Gallium Arsenides Mixed Spectral line broadening Models Auger recombination Gain Semiconductor laser
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Summary:	Experimental observations of spontaneous emission spectra from GaAs-AlGaAs quantum well lasers shown that spectral broadening should be included in any realistic model of laser performance. A model of the lifetime broadening due to intraband Auger processes of the Landsberg type is described and developed for the case of electron-electron scattering in a 2-D system. The model is applied to the calculation of gain and spontaneous emission spectra and gain-current relationships in short-wavelength GaAs-AlGaAs quantum well lasers, and the results are compared with those obtained using both a fixed intraband scattering time and one that varies as n/sup -1/2/, where n is the volume injected carrier density.< >
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 None
ISSN:	0018-9197 1558-1713
DOI:	10.1109/3.52119