Toward a measurement of the effective gauge field and the Born–Huang potential with atoms in chip traps

• Published in: The European physical journal. D, Atomic, molecular, and optical physics Vol. 76; no. 8
• Main Authors: Gürkan, Zeynep Nilhan, Sjöqvist, Erik, Hessmo, Björn, Grémaud, Benoît
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01-08-2022; Springer Nature B.V; EDP Sciences
• Subjects: Applications of Nonlinear Dynamics and Chaos Theory; atom chip; Atomic; Born-Oppenheimer; Cold atoms; Decay rate; effective gauge fields; Electric fields; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik; Mathematical analysis; Molecular; Optical and Plasma Physics; Physical Chemistry; Physics; Physics and Astronomy; Physics with spec. in Atomic, Molecular and Condensed Matter Physics; Quantum Information Technology; Quantum Physics; Regular Article – Cold Matter and Quantum Gases; Spectroscopy/Spectrometry; Spintronics
• ISSN: 1434-6060; 1434-6079; 1434-6079
• DOI: 10.1140/epjd/s10053-022-00461-z

We study magnetic traps with very high trap frequencies where the spin is coupled to the motion of the atom. This allows us to investigate how the Born–Oppenheimer approximation fails and how effective magnetic and electric fields appear as the consequence of the non-adiabatic dynamics. The results are based on exact numerical diagonalization of the full Hamiltonian describing the coupling between the internal and external degrees of freedom. The position in energy and the decay rate of the trapping states corresponding to the imaginary part of the resonances of this Hamiltonian are computed using the complex rotation method.
Graphic abstract