Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure

• Published in: Physics of the solid state Vol. 62; no. 11; pp. 2039 - 2044
• Main Authors: Romanov, V. V., Ivanov, E. V., Moiseev, K. D.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-11-2020; Springer; Springer Nature B.V
• Subjects: Current voltage characteristics; Electroluminescence; Energy bands; Epitaxial growth; Epitaxy; Heterojunctions; Heterostructures; Indium arsenide antimonide phosphide; Metalorganic chemical vapor deposition; Physics; Physics and Astronomy; Semiconductors; Solid State Physics; Vapor phase epitaxy; characteristics; MOVPE; InAs; heterojunction; electroluminescence; antimonides
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783420110244

We report on the electroluminescent and I–V characteristics of the
n
-InAs/
n
-InAsSb/
p
-InAsSbP heterostructure grown by metalorganic vapor-phase epitaxy. In the spectral range of 0.23–0.29 eV, the high-intensity electroluminescence at a temperature of
T
= 77 K has been observed. The position of the maximum of the main emission band (
~ 0.24 eV) has shown a noticeable blue shift with increasing forward bias. Based on the investigations, a conclusion about the existence of a type-II staggered heterojunction at the InAs
0.84
Sb
0.16
/InAs
0.32
Sb
0.28
P
0.40
heterointerface has been drawn, which is confirmed by the calculated energy band diagram.