Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured...
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| Published in: | IEEE transactions on electron devices Vol. 18; no. 2; pp. 97 - 104 |
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| Main Author: | |
| Format: | Journal Article |
| Language: | English |
| Published: |
IEEE
01-02-1971
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| Online Access: | Get full text |
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| Summary: | The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1971.17156 |