Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

Atomic scale analysis of self assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy

In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor inte...

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Bibliographic Details
Published in:Applied physics letters Vol. 96; no. 6; pp. 062101 - 062101-3
Main Authors: Keizer, J. G., Bocquel, J., Koenraad, P. M., Mano, T., Noda, T., Sakoda, K.
Format: Journal Article
Language:English
Published: American Institute of Physics 08-02-2010
Online Access:Get full text
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Summary:In this letter we have performed a structural analysis at the atomic scale of GaAs/AlGaAs quantum dots grown by droplet epitaxy. The shape, composition, and strain of the quantum dots and the AlGaAs matrix are investigated. We show that the GaAs quantum dots have a Gaussian shape and that minor intermixing of Al with the GaAs quantum dot takes place. A wetting layer with a thickness of less than one bilayer was observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3303979