Measurement of intrinsic capacitance of lightly doped drain (LDD) MOSFET's

Intrinsic capacitance of lightly doped drain (LDD) MOSFET's is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance C gd of LDD MOSFET's is smaller than that of conventional MOSFET's in the saturation region. The tec...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 32; no. 11; pp. 2238 - 2242
Main Authors:	Ishiuchi, H., Matsumoto, Y., Sawada, S., Ozawa, O.
Format:	Journal Article
Language:	English
Published:	New York, NY IEEE 01-11-1985 Institute of Electrical and Electronics Engineers
Subjects:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Measurement Field effect transistor Capacitance MOS transistor
Online Access:	Get full text
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Summary:	Intrinsic capacitance of lightly doped drain (LDD) MOSFET's is measured by means of a four-terminal method without using any on-chip measurement circuits. The gate-to-drain capacitance C gd of LDD MOSFET's is smaller than that of conventional MOSFET's in the saturation region. The technique is applied to determine the effective channel length.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9383 1557-9646
DOI:	10.1109/T-ED.1985.22264