Benchmark Tests for MOSFET Compact Models With Application to the PSP Model

• Published in: IEEE transactions on electron devices Vol. 56; no. 2; pp. 243 - 251
• Main Authors: Xin Li, Weimin Wu, Jha, A., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M., McAndrew, C.C., Watts, J., Olsen, C.M., Coram, G.J., Chaudhry, S., Victory, J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-02-2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Approximation methods; Benchmark testing; Benchmark tests; Benchmarking; CMOS; compact model; Design. Technologies. Operation analysis. Testing; Devices; Electronics; Exact sciences and technology; Harmonic analysis; Integrated circuit modeling; Integrated circuits; Logic gates; MOSFET; MOSFET circuits; MOSFETs; Radio frequencies; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Simulation; Stemming; surface-potential-based model; Transistors; MOSFET; compact model; Benchmark tests; Mixed signal circuit; Integrated circuit design; Compact design; CMOS integrated circuits; Low-power electronics; Surface potential; surface-potential-based model
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2008.2010570

This paper presents the results of several qualitative ldquobenchmarkrdquo tests that were used to verify the physical behavior of the PSP model and its usefulness for future generations of CMOS IC design. These include newly developed tests and new experimental data stemming from low-power, RF, mixed-signal, and analog applications of MOSFETs.