Carbon and Tungsten Sputtering in a Helium Magnetron Discharge

• Published in: IEEE transactions on plasma science Vol. 37; no. 8; pp. 1581 - 1585
• Main Authors: Tiron, V., Andrei, C., Nastuta, A.V., Rusu, G.B., Vitelaru, C., Popa, G.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01-08-2009; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Atomic force microscopy; Atomic layer deposition; Bombardment; Carbon; Cross sections; Density; Deposition; Discharge; Electron tubes; Electronic tubes, masers; Electronics; Exact sciences and technology; Helium; Magnetic devices; magnetrons; Scanning electron microscopy; Silicon; Sputtering; Surfaces; Topography; Tungsten; X-ray diffraction; X-rays; Power density; Scanning electron microscopy; Microwave device; Magnetron; Roughness; magnetrons; Microwave generation; Helium; Carbon; Sputtering; Microwave generator; Microwave technology; Discharge current; Tungsten; Silicon; Microwave resonator; Microwave amplifier
• ISSN: 0093-3813; 1939-9375
• DOI: 10.1109/TPS.2009.2024421

This paper reports on carbon and tungsten deposition on a heated silicon substrate under He + bombardment in a magnetron-sputtering device. The discharge was operated at constant pressure of 1.33 Pa for two discharge-current intensities (200 and 600 mA) and target power density up to 40 Wmiddotcm -2 . The deposited films were characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffractometry. The topography and cross section revealed the influence of the target power density on the surface roughness, grains' size, and thickness of the deposited films.