Iodine, Silicon, and Vanadium Differentially Affect Growth, Flowering, and Quality Components of Stalks in Sugarcane

• Published in: Sugar tech : an international journal of sugar crops & related industries Vol. 20; no. 5; pp. 518 - 533
• Main Authors: Sentíes-Herrera, Héctor Emmanuel, Trejo-Téllez, Libia Iris, Volke-Haller, Víctor Hugo, Cadena-Íñiguez, Jorge, Sánchez-García, Prometeo, Gómez-Merino, Fernando Carlos
• Format: Journal Article
• Language: English
• Published: New Delhi Springer India 01-10-2018; Springer; Springer Nature B.V
• Subjects: Agriculture; Biomedical and Life Sciences; Experimental design; Flowering; Growth; Iodine; Life Sciences; Plants (botany); Research Article; Silicon; Sprayers; Sprays; Sugarcane; Vanadium; Pith; Poaceae; Flowering; Beneficial elements; Hormesis; Cavity
• ISSN: 0972-1525; 0974-0740; 0972-1525
• DOI: 10.1007/s12355-017-0572-0

The effect of iodine (I: 0, 11.8, and 23.6 mM), silicon (Si: 0, 0.5, and 1.0 mM), and vanadium (V: 0, 10, and 20 µM) on sugarcane varieties CP 72-2086, Mex 79-431, and Mex 69-290 was evaluated in a completely randomized experimental design. Two foliar sprays were applied: the first one at an age of 8 months and the second at 9 months. Plant height and stem diameter were evaluated between 2 and 3 months after the second foliar spray. Flowering, cavity, and pith formation were evaluated 3 months after the second foliar spray. The 23.6 mM I concentration decreased plant height and stem diameter in Mex 69-290 by 65 and 25%, respectively, in comparison with the control. Si increased growth in all varieties, with the highest height observed in CP 72-2086 treated with 1.0 mM Si (an increase from 7 cm in the control to 44.7 cm in 1.0 mM Si-treated plants). Application of 20 µM V significantly increased plant height in all three varieties, from 5 cm in the control to at least 22 cm in V-treated plants. V at 10 and 20 µM inhibited flowering and pith formation in CP 72-2086, while in Mex 79-431, flowering and pith formation were inhibited by both 10 µM V and 1.0 mM Si. Application of 11.8 mM I decreased flowering and pith by 80% in CP 72-2086. Cavity increased in CP 72-2086 and Mex 69-290, especially when using the highest concentrations of I, Si, and V.