Accurate current sensor for lateral IGBT smart power integration

This paper describes research work on the design and fabrication of a current sensor suitable for smart power integration in lateral insulated-gate bipolar transistor (LIGBT) structure. In general, the proposed design can also be used for various types of MOS-controlled bipolar transistor structures...

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Bibliographic Details
Published in:	IEEE transactions on power electronics Vol. 18; no. 5; pp. 1238 - 1243
Main Authors:	Liang, Y.C., Samudra, G.S., Lim, A.J.D., Pick Hong Ong
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-09-2003 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Bipolar transistors Charge carrier processes Detection Devices Doping profiles Electric power generation Electronics Fabrication Insulated gate bipolar transistors Insulation Intelligent sensors Operating temperature Power Semiconductor devices Sensor phenomena and characterization Sensors Silicon Temperature sensors
Online Access:	Get full text
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