Accurate current sensor for lateral IGBT smart power integration

• Published in: IEEE transactions on power electronics Vol. 18; no. 5; pp. 1238 - 1243
• Main Authors: Liang, Y.C., Samudra, G.S., Lim, A.J.D., Pick Hong Ong
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-09-2003; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bipolar transistors; Charge carrier processes; Detection; Devices; Doping profiles; Electric power generation; Electronics; Fabrication; Insulated gate bipolar transistors; Insulation; Intelligent sensors; Operating temperature; Power; Semiconductor devices; Sensor phenomena and characterization; Sensors; Silicon; Temperature sensors
• DOI: 10.1109/TPEL.2003.816196
• EISSN: 1941-0107
• ISSN: 0885-8993

This paper describes research work on the design and fabrication of a current sensor suitable for smart power integration in lateral insulated-gate bipolar transistor (LIGBT) structure. In general, the proposed design can also be used for various types of MOS-controlled bipolar transistor structures. Both the electron and hole current sensor layers are integrated in a concise form within the device structure. The sensing performance was further refined with the proposed flat-top doping profile achievable through a double-implantation, single-anneal and post-anneal-oxidation approach. The integrated structure was fabricated on silicon wafer with laboratory measurements performed to verify its electrical performance. The sensing ratio is maintained at a relatively constant level with a variation of within /spl plusmn/0.46% and /spl plusmn/1.2% (as a switching device), and /spl plusmn/0.85% and /spl plusmn/1.73% (as an amplifier device), respectively, when anode current and gate voltage vary. For operating temperature range of 300 K to 400 K, the sensor is able to maintain a sensing ratio within /spl plusmn/5.2% variation.