Fabrication and Characterization of Artificial Crystal Originated Particles

Crystal Originated Particles on silicon substrates were imitated by anisotropic etching of pits in the wafer surface. The effect of these artificial defects on the gate oxide in Metal-Oxide-Semiconductor devices was studied. The results show a combined effect of local oxide thinning and electric fie...

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics Vol. 38; no. 12B; p. L1509
Main Authors:	Bearda, Twan, Mertens, Paul W., Heyns, Marc M., Schmolke, Rüdiger
Format:	Journal Article
Language:	English
Published:	1999
Online Access:	Get full text
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Summary:	Crystal Originated Particles on silicon substrates were imitated by anisotropic etching of pits in the wafer surface. The effect of these artificial defects on the gate oxide in Metal-Oxide-Semiconductor devices was studied. The results show a combined effect of local oxide thinning and electric field distortion on the electrical characteristics of the gate oxide.
ISSN:	0021-4922 1347-4065
DOI:	10.1143/JJAP.38.L1509